Carrier effects on ferromagnetism of MnxGe1-x quantum dots
文献类型：期刊论文
| 作者 | Jia, QJ ; Zhong, ZY; Wang, SG; Hu, XF; Liu, T; Wang, LM; Jia QJ(贾全杰); Jiang, ZM
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 111期号:7页码:72103 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4998933 |
| 文献子类 | Article |
| 英文摘要 | Mn-doped Ge quantum dots (QDs) were grown on Si (001) substrates by molecular beam epitaxy. At the same time, modulation doping of boron (B) with different concentrations at 10 nm beneath the QD layers is utilized to modulate the concentration of holes in the QDs. For Mn uni-doped and B uni-modulation-doped Ge QD samples, no credible ferromagnetic signals in the hysteresis loop were observed, while a significant ferromagnetic signal was observed for the Mn-doped Ge QD samples with a high modulation doping of B. Both the magnetic moment and the Curie temperature of the Mn-doped Ge QD samples increase with the modulation doping concentration of B. The increase in the Curie temperature is believed to associate with the exotic holes in the QDs from B dopants, which enhanced coupling between the holes and the localized Mn dopants in the QDs. Those results show a way to enhance the ferromagnetic properties of Mn-doped Ge QDs and provide more evidence to the carrier-mediated ferromagnetism model. Published by AIP Publishing. |
| 电子版国际标准刊号 | 1077-3118 |
| WOS关键词 | DILUTED MAGNETIC SEMICONDUCTOR ; SPINTRONICS |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000407948100010 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/284727]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Jia, QJ,Zhong, ZY,Wang, SG,et al. Carrier effects on ferromagnetism of MnxGe1-x quantum dots[J]. APPLIED PHYSICS LETTERS,2017,111(7):72103. |
| APA | Jia, QJ.,Zhong, ZY.,Wang, SG.,Hu, XF.,Liu, T.,...&Jiang, ZM.(2017).Carrier effects on ferromagnetism of MnxGe1-x quantum dots.APPLIED PHYSICS LETTERS,111(7),72103. |
| MLA | Jia, QJ,et al."Carrier effects on ferromagnetism of MnxGe1-x quantum dots".APPLIED PHYSICS LETTERS 111.7(2017):72103. |
入库方式： OAI收割
来源：高能物理研究所
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