Epitaxial fabrication of two-dimensional NiSe2on Ni(111) substrate
文献类型：期刊论文
| 作者 | Liu, Zhongliu; Wang JO(王嘉鸥) ; Liu C(刘晨); Gao, H.-J.; Wang, Yeliang; Du, Shixuan; Shi, Dongxia; Shao, Yan; Song, Shiru; Wu, Xu
|
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 111期号:11页码:113107 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.4991065 |
| 文献子类 | Article |
| 英文摘要 | Two-dimensional (2D) transition metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, and catalysis. A high-quality 2D film of NiSe2, a TMD material, is grown epitaxially by a single step direct selenization of a Ni(111) substrate. X-ray photoemission spectroscopy, low-energy electron diffraction, scanning tunneling microscopy, and density functional theory calculations are combined to confirm the formation and structure of the film, revealing a (root 3 x root 3) superlattice of the NiSe2 film formed on the (root 7 x root 7) superlattice of the substrate. Fabrication of this 2D NiSe2 film opens opportunities to research its applications, especially for electrocatalysis and energy storage devices. Published by AIP Publishing. |
| 电子版国际标准刊号 | 1077-3118 |
| WOS关键词 | TRANSITION-METAL-DICHALCOGENIDE ; CHARGE-DENSITY-WAVE ; EFFICIENT ; MOS2 ; SUPERCONDUCTIVITY ; CATALYSTS |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000413590200002 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/284728]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Liu, Zhongliu,Wang JO,Liu C,et al. Epitaxial fabrication of two-dimensional NiSe2on Ni(111) substrate[J]. APPLIED PHYSICS LETTERS,2017,111(11):113107. |
| APA | Liu, Zhongliu.,王嘉鸥.,刘晨.,Gao, H.-J..,Wang, Yeliang.,...&Wang, Jiaou.(2017).Epitaxial fabrication of two-dimensional NiSe2on Ni(111) substrate.APPLIED PHYSICS LETTERS,111(11),113107. |
| MLA | Liu, Zhongliu,et al."Epitaxial fabrication of two-dimensional NiSe2on Ni(111) substrate".APPLIED PHYSICS LETTERS 111.11(2017):113107. |
入库方式： OAI收割
来源：高能物理研究所
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