Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy
文献类型：期刊论文
| 作者 | Liu C(刘晨) ; Wang, WH; Cheng, YH; Wang, WC; Wang, JU; Cho, K; Lu, F; Liu, H; Dong, H; Wang JO(王嘉鸥)
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2017 |
| 卷号 | 425页码:932-940 |
| 关键词 | InSb/Al2O3 stacks ALD PDA Synchrotron radiation Diffusion Desorption |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2017.07.001 |
| 文献子类 | Article |
| 英文摘要 | The thermal stability of InSb/Al2O3 stacks has been systematically studied upon in situ post deposition annealing (PDA) at 300 degrees C and 400 degrees C. Atomic layer deposition (ALD) of Al2O3 (similar to 3 nm) has been grown on the native oxide and the HCl aqueous solution treated InSb (100) at 200 degrees C. The interface chemistry, elemental diffusion as well as elemental desorption are characterized by synchrotron radiation photoemission spectroscopy (SRPES) with the incident photon energy of 750, 600 and 500 eV. A Math model has been proposed to calculate the depth profile for In and Sb oxides based on the analysis from different incident energies. Indium atoms have re-oxidized during ALD process, and indium oxide has been observed to diffuse into the Al2O3 film upon PDA at 300 degrees C for the HCl pretreated sample. Indium oxide has desorbed and diffused upon PDA process for the native oxide sample. Sb oxide has been observed to desorb continuously as PDA temperature increases, for all samples. The surface has been torn up upon PDA at 400 degrees C from the morphology characterization. (C) 2017 Elsevier B.V. All rights reserved. |
| 电子版国际标准刊号 | 1873-5584 |
| WOS关键词 | ATOMIC LAYER DEPOSITION ; INDIUM DIFFUSION ; FILMS ; TEMPERATURE ; SURFACE ; HFO2 ; NANOSTRUCTURES ; PASSIVATION ; EVOLUTION ; OXIDES |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000410609400114 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/284731]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Liu C,Wang, WH,Cheng, YH,et al. Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy[J]. APPLIED SURFACE SCIENCE,2017,425:932-940. |
| APA | 刘晨.,Wang, WH.,Cheng, YH.,Wang, WC.,Wang, JU.,...&Liu, C.(2017).Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy.APPLIED SURFACE SCIENCE,425,932-940. |
| MLA | 刘晨,et al."Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy".APPLIED SURFACE SCIENCE 425(2017):932-940. |
入库方式： OAI收割
来源：高能物理研究所
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