Effect of doping concentration on point defect structure in As-implanted ZnO
文献类型：期刊论文
| 作者 | Yuan MY(苑梦尧) ; Wang, HH; Yuan, MY; Wang HH(王焕华)
|
| 刊名 | SOLID STATE COMMUNICATIONS
 |
| 出版日期 | 2017 |
| 卷号 | 261页码:41-45 |
| 关键词 | P-type ZnO Ion implantation Diffuse x-ray scattering Point defects |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2017.04.021 |
| 文献子类 | Article |
| 英文摘要 | The effect of doping concentration on the point defect structure of As-implanted ZnO single crystal was investigated using diffuse x-ray scattering and photoluminescence spectroscopy. Based on the assumption that the low-dose ion implantation did not shift the phonon dispersion of the lattice, Huang diffuse scattering signals were obtained by subtracting thermal diffuse scattering intensities. We found that the point defects aggregate into defect clusters after annealing, and their average size decreases and concentration increases with increasing the doping concentration. The underlying mechanisms of this counter-intuition result were suggested. |
| 电子版国际标准刊号 | 1879-2766 |
| WOS关键词 | X-RAY-SCATTERING ; THIN-FILMS ; LATTICE ; SI |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000405690400009 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/284931]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yuan MY,Wang, HH,Yuan, MY,et al. Effect of doping concentration on point defect structure in As-implanted ZnO[J]. SOLID STATE COMMUNICATIONS,2017,261:41-45. |
| APA | 苑梦尧,Wang, HH,Yuan, MY,&王焕华.(2017).Effect of doping concentration on point defect structure in As-implanted ZnO.SOLID STATE COMMUNICATIONS,261,41-45. |
| MLA | 苑梦尧,et al."Effect of doping concentration on point defect structure in As-implanted ZnO".SOLID STATE COMMUNICATIONS 261(2017):41-45. |
入库方式： OAI收割
来源：高能物理研究所
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