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Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2
文献类型：期刊论文
| 作者 | Shi, YG; Gao, HJ; Wang JO(王嘉鸥) ; Kui RX(奎热西); Wu, X; Shao, Y; Liu, H; Feng, Z; Wang, YL; Sun, JT
|
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2017 |
| 卷号 | 29期号:11页码:1605407 |
| ISSN号 | 0935-9648 |
| DOI | 10.1002/adma.201605407 |
| 文献子类 | Article |
| 英文摘要 | Monolayer antimonene is fabricated on PdTe2 by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided. |
| 电子版国际标准刊号 | 1521-4095 |
| WOS关键词 | ELECTRON LOCALIZATION ; METAL ; GERMANENE ; SURFACE ; HETEROSTRUCTURES ; NANOSHEETS ; SILICENE ; ARSENENE ; IR(111) ; LAYER |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000396375100015 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285102]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_核技术应用研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Shi, YG,Gao, HJ,Wang JO,et al. Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2[J]. ADVANCED MATERIALS,2017,29(11):1605407. |
| APA | Shi, YG.,Gao, HJ.,王嘉鸥.,奎热西.,Wu, X.,...&Ibrahim, K.(2017).Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2.ADVANCED MATERIALS,29(11),1605407. |
| MLA | Shi, YG,et al."Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2".ADVANCED MATERIALS 29.11(2017):1605407. |
入库方式： OAI收割
来源：高能物理研究所
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