The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films
文献类型：期刊论文
| 作者 | Zhang, P; Shi, H; Li, MH ; Chen, X; Fang, S; Han, G; Zhao, CJ; Wang, BY; Cao, XZ; Wang, DW
|
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2017 |
| 卷号 | 725页码:425-432 |
| 关键词 | HfO2 CoFeB/MgO Magnetic anisotropy Film defects Oxygen migration |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2017.07.142 |
| 文献子类 | Article |
| 英文摘要 | Metal oxides are used in magnetic tunnel junctions to improve the magnetic properties and thermostability of materials in high-performance applications. In this study, an ultrathin Hf film is deposited on a Ta buffer layer. Moreover, subsequent annealing at 350 degrees C leads to the oxidation of Hf into HfO2, as confirmed by X-ray photoelectron spectrometry (XPS). The effect of HfO2 on magnetic anisotropy is evaluated in Ta/Hf/CoFeB/MgO/Ta multilayer films. Easy-axis magnetisation transition from in-plane to out-of-plane direction is observed at an annealing temperature of 200 degrees C. Moreover, the sample annealed at a temperature of 350 degrees C exhibits clear perpendicular magnetic anisotropy, which satisfies industry requirements in terms of annealing temperature for magnetic random access memory applications. XPS, positron annihilation spectroscopy (PAS), X-ray reflectivity (XRR) and atomic force microscopy (AFM) are used to study film composition, defects, interface width and surface roughness in Ta/Hf/CoFeB/MgO/Ta multilayers. XPS results demonstrate partial suppression of Ta atom diffusion and enhanced formation of Fe (Co) oxides in CoFeB/MgO. The results of PAS analysis suggest that the density of film defects decreases after annealing at 350 degrees C. XRR and AFM results reveal that annealing at 350 degrees C produces a smoother CoFeB/MgO interface. Together, these factors lead to improved magnetic properties and thermostability in a Ta/Hf/CoFeB/MgO/Ta film. (C) 2017 Elsevier B.V. All rights reserved. |
| 电子版国际标准刊号 | 1873-4669 |
| WOS关键词 | PERPENDICULAR-ANISOTROPY ; OXIDE CATALYSTS ; INTERFACE |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000412332900050 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285287]  |
| 专题 | 高能物理研究所_核技术应用研究中心 高能物理研究所_实验物理中心 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhang, P,Shi, H,Li, MH,et al. The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,725:425-432. |
| APA | Zhang, P.,Shi, H.,Li, MH.,Chen, X.,Fang, S.,...&曹兴忠.(2017).The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films.JOURNAL OF ALLOYS AND COMPOUNDS,725,425-432. |
| MLA | Zhang, P,et al."The effect of HfO2 on the magnetic anisotropy, electrical structure and microstructure of CoFeB/MgO films".JOURNAL OF ALLOYS AND COMPOUNDS 725(2017):425-432. |
入库方式： OAI收割
来源：高能物理研究所
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