Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL
文献类型：期刊论文
| 作者 | Tong T(童腾); Liu, J ; Ye, B; Wang, B; Liu, JD; Liu, WJ; Su, H; Wang, XH; Tong, T; Guo, JL
|
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2017 |
| 卷号 | 404页码:254-258 |
| 关键词 | Heavy-ion microbeam High-energy Single event upset FPGA Imaging |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2017.01.069 |
| 文献子类 | Article; Proceedings Paper |
| 英文摘要 | The heavy-ion imaging of single event upset (SEU) in a flash-based field programmable gate array (FPGA) device was carried out for the first time at Heavy Ion Research Facility in Lanzhou (HIRFL). The three shift register chains with separated input and output configurations in device under test (DUT) were used to identify the corresponding logical area rapidly once an upset occurred. The logic units in DUT were partly configured in order to distinguish the registers in SEU images. Based on the above settings, the partial architecture of shift register chains in DUT was imaged by employing the microbeam of Kr-86 ion with energy of 25 MeV/u in air. The results showed that the physical distribution of registers in DUT had a high consistency with its logical arrangement by comparing SEU image with logic configuration in scanned area. (C) 2017 Elsevier B.V. All rights reserved. |
| 会议地点 | Chinese Acad Sci, Inst Modern Phys, Lanzhou, PEOPLES R CHINA |
| 电子版国际标准刊号 | 1872-9584 |
| WOS关键词 | SINGLE EVENT UPSET ; INDUCED CHARGE ; POWER MOSFETS ; SYSTEM ; EPILAYER ; BURNOUT ; BULK ; SOI |
| 会议日期 | JUL 31-AUG 05, 2016 |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000404709900048 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/284890]  |
| 专题 | 高能物理研究所_核技术应用研究中心 高能物理研究所_加速器中心 高能物理研究所_多学科研究中心 中国科学院高能物理研究所_中国散裂中子源 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Tong T,Liu, J,Ye, B,et al. Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2017,404:254-258. |
| APA | 童腾.,Liu, J.,Ye, B.,Wang, B.,Liu, JD.,...&Yang, ZL.(2017).Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,404,254-258. |
| MLA | 童腾,et al."Application of SEU imaging for analysis of device architecture using a 25 MeV/u Kr-86 ion microbeam at HIRFL".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 404(2017):254-258. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。