中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Selecting of modes in nano-laser of silicon quantum dots

文献类型:期刊论文

作者Wei-Qi Huang;  Shi-Rong Liu;  Chao-Jian Qin;  Quan Lü
刊名Optics Communications
出版日期2012
卷号285期号:13–14页码:3217-3221
关键词Nano-laser si Quantum Dots localized States photonic Crystal
英文摘要

In a nano-laser of Si quantum dots (QD), the smaller QD fabricated by nanosecond pulse laser can form the pumping level tuned by the quantum confinement (QC) effect. Coupling between the active centers formed by localized states of surface bonds and the two-dimensional (2D) photonic crystal used to select model can produce a sharp peak at 2.076 eV in the nano-laser. It is interesting to make a comparison between the localized electronic states in gap due to defect formed by surface bonds and the localized photonic states in gap of photonic band due to defect of 2D photonic crystal.

语种英语
源URL[http://ir.gyig.ac.cn/handle/42920512-1/9469]  
专题地球化学研究所_矿床地球化学国家重点实验室
作者单位1.Institute of Nanophotonic Physics, Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550025, China
2.State Key Laboratory of Ore Deposit Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
推荐引用方式
GB/T 7714
Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü. Selecting of modes in nano-laser of silicon quantum dots[J]. Optics Communications,2012,285(13–14):3217-3221.
APA Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü.(2012).Selecting of modes in nano-laser of silicon quantum dots.Optics Communications,285(13–14),3217-3221.
MLA Wei-Qi Huang;Shi-Rong Liu;Chao-Jian Qin;Quan Lü."Selecting of modes in nano-laser of silicon quantum dots".Optics Communications 285.13–14(2012):3217-3221.

入库方式: OAI收割

来源:地球化学研究所

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