中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping

文献类型:期刊论文

作者Zhidan Zeng;  Lin Wang;  Xiangyang Ma;  Shaoxing Qu;   Jiahe Chen;  Yonggang Liu;  Deren Yang
刊名Scripta Materialia
出版日期2011
卷号64期号:9页码:832–835
关键词Silicon Nanoindentation Phase Transformation Raman Spectroscopy Germanium Doping
英文摘要

The mechanical properties of germanium-doped Czochralski (GCz) silicon have been investigated using instrumented nanoindentation combined with an ultrasonic pulse-echo overlap technique. The GCz silicon samples showed higher Young’s modulus and hardness than germanium-free Czochralski silicon samples in nanoindentation tests. We believe this was caused by the enhanced phase transition from the Si-I phase to the stiffer Si-II phase in GCz silicon under contact load during indentation. This scenario was further confirmed by micro-Raman spectroscopy measurements.

语种英语
源URL[http://ir.gyig.ac.cn/handle/42920512-1/9498]  
专题地球化学研究所_地球内部物质高温高压实验室
作者单位1.State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
2.High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, IL 60439, USA
3.State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People’s Republic of China
4.Institute of Applied Mechanics,School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, People’s Republic of China
5.Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002, People’s Republic of China
推荐引用方式
GB/T 7714
Zhidan Zeng;Lin Wang;Xiangyang Ma;Shaoxing Qu; Jiahe Chen;Yonggang Liu;Deren Yang. Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping[J]. Scripta Materialia,2011,64(9):832–835.
APA Zhidan Zeng;Lin Wang;Xiangyang Ma;Shaoxing Qu; Jiahe Chen;Yonggang Liu;Deren Yang.(2011).Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping.Scripta Materialia,64(9),832–835.
MLA Zhidan Zeng;Lin Wang;Xiangyang Ma;Shaoxing Qu; Jiahe Chen;Yonggang Liu;Deren Yang."Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping".Scripta Materialia 64.9(2011):832–835.

入库方式: OAI收割

来源:地球化学研究所

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