Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field
文献类型:期刊论文
作者 | Li,Dabing2,3![]() ![]() |
刊名 | Nanoscale Research Letters
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出版日期 | 2019-05-30 |
卷号 | 14期号:1 |
关键词 | Refractive index AlN Threading dislocation density Nanoscale strain field around dislocations |
ISSN号 | 1931-7573 |
DOI | 10.1186/s11671-019-3018-7 |
通讯作者 | Sun,Xiaojuan(sunxj@ciomp.ac.cn) ; Li,Dabing(lidb@ciomp.ac.cn) |
英文摘要 | AbstractThe refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Revealing the dependence of the refractive index of AlN on the threading dislocations is meaningful since high-density threading dislocations usually exist in AlN. In this paper, the effect of different dislocation densities on the refractive index of AlN is investigated. With the increase of dislocation densities from 4.24?×?108 to 3.48?×?109?cm??2, the refractive index of AlN decreases from 2.2508 to 2.2102 at 280?nm. Further study demonstrates that the nanoscale strain field around dislocations changes the propagation of light and thus decreases the refractive index of AlN. This study will be beneficial to the design of optoelectronic devices and thus realizing high-performance deep ultraviolet optoelectronic devices. |
语种 | 英语 |
WOS记录号 | BMC:10.1186/S11671-019-3018-7 |
出版者 | Springer US |
源URL | [http://ir.ciomp.ac.cn/handle/181722/60259] ![]() |
专题 | 中国科学院长春光学精密机械与物理研究所 |
通讯作者 | Li,Dabing; Sun,Xiaojuan |
作者单位 | 1. 2. 3. |
推荐引用方式 GB/T 7714 | Li,Dabing,Feng,Zhe Chuan,Luo,Xuguang,et al. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field[J]. Nanoscale Research Letters,2019,14(1). |
APA | Li,Dabing.,Feng,Zhe Chuan.,Luo,Xuguang.,Wang,Yong.,Kai,Cuihong.,...&Ben,Jianwei.(2019).Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field.Nanoscale Research Letters,14(1). |
MLA | Li,Dabing,et al."Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field".Nanoscale Research Letters 14.1(2019). |
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