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2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices

文献类型：期刊论文

作者Chen, Wei1,5,6,7; Wee, Andrew T. S.5; Liu, Lei2; Wang, Li3,4; Hu, Zehua5; Han, Cheng5,6; Zhang, Jia Lin7
刊名ADVANCED MATERIALS
出版日期2018-11-22
卷号30期号:47页码:11
关键词2D phosphorene electronic devices epitaxial growth interface engineering
ISSN号0935-9648
DOI10.1002/adma.201802207
通讯作者Chen, Wei(phycw@nus.edu.sg)
英文摘要Black phosphorus (BP), first synthesized in 1914 and rediscovered as a new member of the family of 2D materials in 2014, combines many extraordinary properties of graphene and transition-metal dichalcogenides, such as high charge-carrier mobility, and a tunable direct bandgap. In addition, it displays other distinguishing properties, e.g., ambipolar transport and highly anisotropic properties. The successful application of BP in electronic and optoelectronic devices has stimulated significant research interest in other allotropes and alloys of 2D phosphorene, a class of 2D materials consisting of elemental phosphorus. As an atomically thin sheet, the various interfaces presented in 2D phosphorene (substrate/phosphorene, electrode/phosphorene, dielectric/phosphorene, atmosphere/phosphorene) play dominant roles in its bottom-up synthesis, and determine several key characteristics for the devices, such as carrier injection, carrier transport, carrier concentration, and device stability. The rational design/engineering of interfaces provides an effective way to manipulate the growth of 2D phosphorene, and modulate its electronic and optoelectronic properties to realize high-performance multifunctional devices. Here, recent progress of the interface engineering of 2D phosphorene is highlighted, including the epitaxial growth of single-layer blue phosphorus on different substrates, surface functionalization of BP for high-performance complementary devices, and the investigation of the BP degradation mechanism in ambient air.
WOS关键词LAYER BLACK PHOSPHORUS ; FIELD-EFFECT TRANSISTORS ; 2-DIMENSIONAL MATERIALS ; TRANSPORT-PROPERTIES ; BAND-GAP ; SURFACE FUNCTIONALIZATION ; AMBIENT DEGRADATION ; QUANTUM CONFINEMENT ; CARRIER MOBILITY ; BLUE PHOSPHORUS
资助项目NSFC[21573156] ; Natural Science Foundation of Jiangsu Province[BK20170005] ; National Science Fund for Distinguished Young Scholars of China[61525404] ; Singapore MOE Grant[R143-000-652-112] ; Fundamental Research Foundation of Shenzhen[JCYJ20170817100405375] ; Shenzhen Peacock Plan[KQTD2016053112042971] ; Science and Technology Planning Project of Guangdong Province[2016B050501005]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种英语
WOS记录号WOS:000450371900013
出版者WILEY-V C H VERLAG GMBH
资助机构NSFC ; Natural Science Foundation of Jiangsu Province ; National Science Fund for Distinguished Young Scholars of China ; Singapore MOE Grant ; Fundamental Research Foundation of Shenzhen ; Shenzhen Peacock Plan ; Science and Technology Planning Project of Guangdong Province
源URL[http://ir.ciomp.ac.cn/handle/181722/60304]  
专题中国科学院长春光学精密机械与物理研究所
通讯作者Chen, Wei
作者单位1.Natl Univ Singapore, Suzhou Res Inst, 377 Lin Quan St, Suzhou Industrial Pk 215123, Jiangsu, Peoples R China
2.Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, 3888 Dongnanhu Rd, Changchun 130033, Jilin, Peoples R China
3.Nanchang Univ, Dept Phys, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China
4.Nanchang Univ, Inst Adv Study, 999 Xue Fu Da Dao, Nanchang 330031, Jiangxi, Peoples R China
5.Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore
6.Shenzhen Univ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Shenzhen 518060, Peoples R China
7.Natl Univ Singapore, Dept Chem, 3 Sci Dr 3, Singapore 117543, Singapore
推荐引用方式
GB/T 7714		 Chen, Wei,Wee, Andrew T. S.,Liu, Lei,et al. 2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices[J]. ADVANCED MATERIALS,2018,30(47):11.
APA Chen, Wei.,Wee, Andrew T. S..,Liu, Lei.,Wang, Li.,Hu, Zehua.,...&Zhang, Jia Lin.(2018).2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices.ADVANCED MATERIALS,30(47),11.
MLA Chen, Wei,et al."2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices".ADVANCED MATERIALS 30.47(2018):11.

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来源：长春光学精密机械与物理研究所

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