Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors
文献类型：期刊论文
| 作者 | Whitlow, HJ; Roosendaal, SJ; El Bouanani, M; Ghetti, R; Johnston, PN; Jakobsson, B; Hellborg, R; Petersson, H; Omling, P; Wang, ZG |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 1998-02-01 |
| 卷号 | 135期号:1-4页码:523-531 |
| 关键词 | Si charged particle detectors p-i-n diodes radiation damage leakage current nuclear stopping |
| ISSN号 | 0168-583X |
| 通讯作者 | Whitlow, HJ() |
| 英文摘要 | The changes in thick (similar to 300 mu m) and thin (15 mu m) Si p-i-n diode detectors that take place as a result of alpha particle and Cu-63(5+) ion irradiation have been studied by Deep Level Transient Spectroscopy (DLTS) and by monitoring the reverse-bias leakage currents. A linear increase in reverse-bias current with alpha-particle dose was observed that could be at tributed to the formation of vacancy-associated defects (divacancy, A- and E-centres). Damage within the active layer of the device, characterised by the increase in leakage current per unit active volume, together with literature pion, proton and heavy ion data, exhibited a linear dependence on the energy deposited in nuclear processes over many orders of magnitude. Annealing at temperatures of 150 degrees C for 4 h (vacuum bakeout) resulted in a reduction in leakage current and the size of the DLTS peaks became smaller. This temperature is much lower than expected for removal of divacancies, suggesting that recovery of the reverse bias current is mediated by other defect centres. (C) 1998 Elsevier Science B.V. |
| 收录类别 | ISTP ; SCI |
| WOS关键词 | INDUCED DISPLACEMENT DAMAGE ; RADIATION-DAMAGE ; IRRADIATED SILICON ; RECOIL SPECTROMETRY ; HEAVY-IONS ; DEFECT PRODUCTION ; RESOLUTION ; MASS ; ELECTRON ; PION |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS类目 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear |
| 语种 | 英语 |
| WOS记录号 | WOS:000074395300095 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2559096 |
| 专题 | 南京土壤研究所 |
| 通讯作者 | Whitlow, HJ |
| 作者单位 | 1.Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden 2.Royal Melbourne Inst Technol, Dept Appl Phys, Melbourne, Vic 3001, Australia 3.Univ Lund, Div Cosm & Sub Atom Phys, S-22100 Lund, Sweden 4.Lund Inst Technol, Dept Solid State Phys, S-22100 Lund, Sweden 5.Univ Utrecht, Debye Inst Surface & Interface Phys, Utrecht, Netherlands 6.Chinese Acad Sci, Inst Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Whitlow, HJ,Roosendaal, SJ,El Bouanani, M,et al. Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1998,135(1-4):523-531. |
| APA | Whitlow, HJ.,Roosendaal, SJ.,El Bouanani, M.,Ghetti, R.,Johnston, PN.,...&Wang, ZG.(1998).Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,135(1-4),523-531. |
| MLA | Whitlow, HJ,et al."Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 135.1-4(1998):523-531. |
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来源：南京土壤研究所
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