Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition
文献类型:期刊论文
作者 | Guo, Junjiang1,2,3; Wang, Dan4; Xu, Yantao1,3![]() ![]() ![]() ![]() |
刊名 | AIP Advances
![]() |
出版日期 | 2019-09-01 |
卷号 | 9期号:9 |
ISSN号 | 21583226 |
DOI | 10.1063/1.5113671 |
产权排序 | 1 |
英文摘要 | Secondary electron emission (SEE) plays a crucial role in the gain performance of devices, such as electron multipliers and microchannel plates (MCPs). Gain performance could be improved by increasing the secondary electron yield (SEY) of device surface. Al2O3 coating is an ideal material for SEE, benefiting from its high SEY. The Al2O3 coating deposited on inner device walls by atomic layer deposition (ALD) can improve the gain performance of devices. In this study, the SEE characteristics of Al2O3 coatings were investigated experimentally. A series of Al2O3 coatings with thicknesses of 1-30 nm were prepared on Si substrate through the ALD method. Then, the SEY of the coatings were quantified as a function of primary electron energy in the range of 100∼1500 eV. Furthermore, an equation describing the true SEY as a function of thickness was established by applying theory of Dionne's SEE model. This work presents potential approach for controlling the SEE level of Al2O3 coatings through thickness adjustment and is crucial for comprehending the SEE of composite materials. © 2019 Author(s). |
语种 | 英语 |
WOS记录号 | WOS:000488516200018 |
出版者 | American Institute of Physics Inc. |
源URL | [http://ir.opt.ac.cn/handle/181661/31864] ![]() |
专题 | 西安光学精密机械研究所_先进光电与生物材料研发中心 |
通讯作者 | Guo, Haitao |
作者单位 | 1.State Key Laboratory of Transient Optics and Photonics, Xian Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xian; 710119, China; 2.Key Laboratory for Physical Electronics, Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronics and Information Engineering, Xian Jiaotong University, Xian; 710049, China; 3.University of Chinese Academy of Sciences, Beijing; 100049, China; 4.School of Microelectronics, Xian Jiaotong University, Xian; 710049, China; 5.State Key Laboratory of Institute of High Energy Physics Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing; 100049, China; 6.National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology, Xian; 710100, China |
推荐引用方式 GB/T 7714 | Guo, Junjiang,Wang, Dan,Xu, Yantao,et al. Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition[J]. AIP Advances,2019,9(9). |
APA | Guo, Junjiang.,Wang, Dan.,Xu, Yantao.,Zhu, Xiangping.,Wen, Kaile.,...&Guo, Haitao.(2019).Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition.AIP Advances,9(9). |
MLA | Guo, Junjiang,et al."Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition".AIP Advances 9.9(2019). |
入库方式: OAI收割
来源:西安光学精密机械研究所
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。