Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector
文献类型：期刊论文
| 作者 | Xu, MX; Dong, M; Yan, K; Wang, TY; Liu, JD ; Gu, BC; Kong, XQ; Wang HH(王焕华); Ouyang, XP; Huang, F
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| 刊名 | ADVANCED ELECTRONIC MATERIALS
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| 出版日期 | 2018 |
| 卷号 | 4期号:2页码:1700307 |
| 关键词 | crystal imperfection modulation engineering electrochemical doping H elimination wide band gap semiconductor ZnO |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.201700307 |
| 文献子类 | Article |
| 英文摘要 | Controllable and repeatable crystal imperfection modulation engineering (CIME) is important for the development of semiconductor science and technology. However, for wide band gap semiconductors (WBGSs), there still lacks universal and reliable CIME. Here, based on the general idea of chemical composition complete expression design, a well-designed, repeatable, and feasible CIME for ZnO is introduced, making free modulation of carrier in WBGS become possible. Briefly, this extraordinary CIME is dominated by two innovative procedures: an electrochemical doping and a strong oxidizing atmosphere annealing. The proposed CIME is a repeatable and universal carrier modulation project, which holds technological promise for various WBGS-based semiconductor devices. Benefiting from this CIME, an particle detector which operating at a high electric field of 10(7) V cm(-1) can be fabricated successfully. |
| WOS关键词 | POSITRON-ANNIHILATION ; ZNO ; LIFETIME ; DEFECTS ; FILMS |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000424888600003 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285626]  |
| 专题 | 高能物理研究所_多学科研究中心 高能物理研究所_加速器中心 高能物理研究所_理论物理室 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xu, MX,Dong, M,Yan, K,et al. Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector[J]. ADVANCED ELECTRONIC MATERIALS,2018,4(2):1700307. |
| APA | Xu, MX.,Dong, M.,Yan, K.,Wang, TY.,Liu, JD.,...&Cheng, S.(2018).Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector.ADVANCED ELECTRONIC MATERIALS,4(2),1700307. |
| MLA | Xu, MX,et al."Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector".ADVANCED ELECTRONIC MATERIALS 4.2(2018):1700307. |
入库方式： OAI收割
来源：高能物理研究所
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