Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection
文献类型：期刊论文
| 作者 | Liang XH(梁晓华) ; Cui XZ(崔兴柱); Liang, XH; Xia, XC; Ye, X; Cui, XZ; Du, GT; Zhang, HQ; Li, Z; Liang, HW
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| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2018 |
| 卷号 | 27期号:8页码:87304 |
| 关键词 | alpha particle detector silicon carbide thermal stability Schottky barrier |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/27/8/087304 |
| 文献子类 | Article |
| 英文摘要 | Au/Ni/n-type 4H-SiC Schottky alpha particle detectors are fabricated and annealed at temperatures between 400 degrees C and 700 degrees C to investigate the effects of thermal stability of the Schottky contact on the structural and electrical properties of the detectors. At the annealing temperature of 500 degrees C, the two nickel silicides (i.e., Ni31Si12 and Ni2Si) are formed at the interface and result in the formation of an inhomogeneous Schottky barrier. By increasing the annealing temperature, the Ni31Si12 transforms into the more stable Ni2Si. The structural evolution of the Schottky contact directly affects the electrical properties and alpha particle energy resolutions of the detectors. A better energy resolution of 2.60% is obtained for 5.48-MeV alpha particles with the detector after being annealed at 600 degrees C. As a result, the Au/Ni/n-type 4H-SiC Schottky detector shows a good performance after thermal treatment at temperatures up to 700 degrees C. |
| 电子版国际标准刊号 | 1741-4199 |
| WOS关键词 | SILICON-CARBIDE ; ELECTRICAL-PROPERTIES ; CONTACTS ; SEMICONDUCTOR ; FABRICATION ; NI |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| CSCD记录号 | CSCD:6320950 |
| WOS记录号 | WOS:000442031400004 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286224]  |
| 专题 | 高能物理研究所_粒子天体物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Liang XH,Cui XZ,Liang, XH,et al. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. CHINESE PHYSICS B,2018,27(8):87304. |
| APA | 梁晓华.,崔兴柱.,Liang, XH.,Xia, XC.,Ye, X.,...&Liang, HW.(2018).Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection.CHINESE PHYSICS B,27(8),87304. |
| MLA | 梁晓华,et al."Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection".CHINESE PHYSICS B 27.8(2018):87304. |
入库方式： OAI收割
来源：高能物理研究所
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