Study of silicon photomultiplier performance in external electric fields
文献类型：期刊论文
| 作者 | nEXO Collaboration |
| 刊名 | JOURNAL OF INSTRUMENTATION
 |
| 出版日期 | 2018 |
| 卷号 | 13页码:T09006 |
| 关键词 | Cryogenic detectors Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTS, G-APDs, CCDs, EBCCDs, EMCCDs etc) Double-beta decay detectors Noble liquid detectors (scintillation, ionization, double-phase) |
| ISSN号 | 1748-0221 |
| DOI | 10.1088/1748-0221/13/09/T09006 |
| 文献子类 | Article |
| 英文摘要 | We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure. |
| WOS研究方向 | Instruments & Instrumentation |
| 语种 | 英语 |
| WOS记录号 | WOS:000444799500001 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286322]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | nEXO Collaboration. Study of silicon photomultiplier performance in external electric fields[J]. JOURNAL OF INSTRUMENTATION,2018,13:T09006. |
| APA | nEXO Collaboration.(2018).Study of silicon photomultiplier performance in external electric fields.JOURNAL OF INSTRUMENTATION,13,T09006. |
| MLA | nEXO Collaboration."Study of silicon photomultiplier performance in external electric fields".JOURNAL OF INSTRUMENTATION 13(2018):T09006. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。