New study for SiPMs performance in high electric field environment
文献类型：期刊论文
| 作者 | nEXO Collaboration |
| 刊名 | SPRINGER PROCEEDINGS IN PHYSICS
 |
| 出版日期 | 2018 |
| 卷号 | 213页码:299-303 |
| ISSN号 | 0930-8989 |
| DOI | 10.1007/978-981-13-1316-5_56 |
| 文献子类 | Proceedings Paper |
| 英文摘要 | We report on a new study for the performance of the Silicon Photo-Multipliers (SiPMs) light sensors when they are exposed to high electric field strengths in cryogenic environment. Three different SiPMs from two vendors (FBK and Hamamatsu) have been tested. The SiPMs showed very good stability, with respect to the gain and the crosstalk probability, when they are exposed to high electric fields compared to the case with the absence of the electric field. © Springer Nature Singapore Pte Ltd. 2018. |
| 会议地点 | Beijing, China |
| 电子版国际标准刊号 | 1867-4941 |
| 语种 | 英语 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286597]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | nEXO Collaboration. New study for SiPMs performance in high electric field environment[J]. SPRINGER PROCEEDINGS IN PHYSICS,2018,213:299-303. |
| APA | nEXO Collaboration.(2018).New study for SiPMs performance in high electric field environment.SPRINGER PROCEEDINGS IN PHYSICS,213,299-303. |
| MLA | nEXO Collaboration."New study for SiPMs performance in high electric field environment".SPRINGER PROCEEDINGS IN PHYSICS 213(2018):299-303. |
入库方式： OAI收割
来源：高能物理研究所
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