Performance evaluation of an SOI pixel sensor with in-pixel binary counters
文献类型：期刊论文
| 作者 | Ou YQ(欧阳群) ; Ouyang, Qun; Song LL(宋龙龙); Lu YP(卢云鹏); Zhou Y(周扬); Wu ZG(吴志岗); Song, Longlong, Lu, Yunpeng, Hashimoto, Ryo, Nishimura, Ryutaro, Kishimoto, Shunji, Zhou, Yang, Wu, Zhigang, Arai, Yasuo
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| 刊名 | RADIATION DETECTION TECHNOLOGY AND METHODS
 |
| 出版日期 | 2018 |
| 卷号 | 2018期号: 1页码: 12 |
| ISSN号 | 2509-9930 |
| DOI | 10.1007/s41605-018-0043-5 |
| 文献子类 | Article |
| 英文摘要 | Pixel detectors fabricated with the silicon-on-insulator (SOI) technology suffered from the digital pickup, due to the capacitive coupling between the sensing electrode and the in-pixel circuit. In order to tackle this issue, an advanced process called double SOI has been developed. A prototype chip CPIXTEG3b adopting this new process was designed and characterized. While optimization concerning the double-SOI design and testing of the single pixel were already presented in a separate publication, this paper focuses on its noise performance of the full matrix and X-ray detection utilizing a synchrotron photon beam. |
| 电子版国际标准刊号 | 2509-9949 |
| 语种 | 英语 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286761]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 通讯作者 | Lu YP(卢云鹏) |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Ou YQ,Ouyang, Qun,Song LL,et al. Performance evaluation of an SOI pixel sensor with in-pixel binary counters[J]. RADIATION DETECTION TECHNOLOGY AND METHODS,2018,2018( 1): 12. |
| APA | 欧阳群.,Ouyang, Qun.,宋龙龙.,卢云鹏.,周扬.,...&Song, Longlong, Lu, Yunpeng, Hashimoto, Ryo, Nishimura, Ryutaro, Kishimoto, Shunji, Zhou, Yang, Wu, Zhigang, Arai, Yasuo.(2018).Performance evaluation of an SOI pixel sensor with in-pixel binary counters.RADIATION DETECTION TECHNOLOGY AND METHODS,2018( 1), 12. |
| MLA | 欧阳群,et al."Performance evaluation of an SOI pixel sensor with in-pixel binary counters".RADIATION DETECTION TECHNOLOGY AND METHODS 2018. 1(2018): 12. |
入库方式： OAI收割
来源：高能物理研究所
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