Mo-Al co-doped VO2(B) thin films: CVD synthesis, thermal sensitive properties, synchrotron radiation photoelectron and absorption spectroscopy study
文献类型：期刊论文
| 作者 | Wang, JO ; Zhu, SX; Luo, HJ; Gao, YF; Guo, BB; Wan, DY; Wang JO(王嘉鸥)
|
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2018 |
| 卷号 | 745页码:247-255 |
| 关键词 | VO2(B) thin films Uncooled infrared (IR) detector Synergetic improvement Mo-Al co-doping Synchrotron radiation study |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2018.02.195 |
| 文献子类 | Article |
| 英文摘要 | Endowing vanadium dioxide (VO2) thin films with excellent thermal sensitive performance is greatly desired for application in uncooled infrared (IR) detectors. Here, we demonstrate a strategy of co-doping by using a simple and feasible CVD method to synthesize Mo-Al-doped VO2(B) thin films with high temperature-coefficient-of-resistance (TCR, -3.6%/K) and favorable square resistances (16.2 k Omega). Both the TCR and resistance are superior to that of undoped and Al-doped VO2(B) thin film, and the TCR is larger than that of Mo-doped VO2(B) thin film. The underlying microscopic mechanism for the performance improvement might be that Mo-Al co-doping creates less lattice deformation, strain and inhomogeneity of carrier concentration due to dimension and charge compensation than that of single-doping and the partly release of 3d electrons around V4+-V4+ pairs in co-doping films. Besides, the special two-dimensional octahedral structure of monoclinic (C2/m) VO2(B) favors the strain control with doping. The films have been subjected to synchrotron radiation based X-ray photoelectron spectroscopy (SRPES) and X-ray absorption near edge structure (XANES) techniques to study the local atomic and electronic structure around V ions. The results indicated that the dopants of Mo and Al were incorporated into the VO2 lattice and occupied some of the V lattice sites, resulting in the formation of the V1-x-yMoxAlyO2 substitution solid solution. V L-edge and O K-edge XAS results identically verified that Mo-Al co-doping might create the least lattice deformation in films. Hence, the high performance of films proves that the co-doping strategy is suitable for uncooled infrared detector applications. (C) 2018 Elsevier B.V. All rights reserved. |
| 电子版国际标准刊号 | 1873-4669 |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; METAL-INSULATOR-TRANSITION ; X-RAY-ABSORPTION ; PULSED-LASER DEPOSITION ; ENERGY-SAVING FOILS ; VANADIUM DIOXIDE ; PHASE-TRANSITION ; HYDROTHERMAL SYNTHESIS ; THERMOCHROMIC PROPERTIES ; TEMPERATURE-COEFFICIENT |
| WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000429163800030 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285803]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Wang, JO,Zhu, SX,Luo, HJ,et al. Mo-Al co-doped VO2(B) thin films: CVD synthesis, thermal sensitive properties, synchrotron radiation photoelectron and absorption spectroscopy study[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,745:247-255. |
| APA | Wang, JO.,Zhu, SX.,Luo, HJ.,Gao, YF.,Guo, BB.,...&王嘉鸥.(2018).Mo-Al co-doped VO2(B) thin films: CVD synthesis, thermal sensitive properties, synchrotron radiation photoelectron and absorption spectroscopy study.JOURNAL OF ALLOYS AND COMPOUNDS,745,247-255. |
| MLA | Wang, JO,et al."Mo-Al co-doped VO2(B) thin films: CVD synthesis, thermal sensitive properties, synchrotron radiation photoelectron and absorption spectroscopy study".JOURNAL OF ALLOYS AND COMPOUNDS 745(2018):247-255. |
入库方式： OAI收割
来源：高能物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。