Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr2O4
文献类型：期刊论文
| 作者 | Menendez, C; Cazorla, C; Samanta, S; Li, XD ; Lu, JL; Wang, L; Li XD(李晓东); onea, D; Err; Zhang, JB
|
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2018 |
| 卷号 | 97期号:17页码:174102 |
| ISSN号 | 2469-9950 |
| DOI | 10.1103/PhysRevB.97.174102 |
| 文献子类 | Article |
| 英文摘要 | The effect of pressure on the structural, vibrational, and electronic properties of Mg-doped Cr bearing spinel Co0.5Mg0.5Cr2O4 was studied up to 55 GPa at room-temperature using x-ray diffraction, Raman spectroscopy, electrical transport measurements, and ab initio calculations. We found that the ambient-pressure phase is cubic (spinel-type, Fd(3)over-barm) and underwent a pressure-induced structural transition to a tetragonal phase (space group I(4)over-barm2) above 28 GPa. The ab initio calculation confirmed this first-order phase transition. The resistivity of the sample decreased at low pressures with the existence of a low-pressure (LP) phase and started to increase with the emergence of a high-pressure (HP) phase. The temperature dependent resistivity experiments at different pressures illustrated the wide band gap semiconducting nature of both the LP and HP phases with different activation energies, suggesting a semiconductor-semiconductor transition at HP. No evidence of chemical decomposition or a semiconductor-metal transition was observed in our studies. |
| 电子版国际标准刊号 | 2469-9969 |
| WOS关键词 | X-RAY-DIFFRACTION ; AUGMENTED-WAVE METHOD ; EQUATION-OF-STATE ; SPINEL MGCR2O4 ; ZN ; NANOPARTICLES ; STABILITY ; BEHAVIOR ; MG |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000432031700001 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285898]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Menendez, C,Cazorla, C,Samanta, S,et al. Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr2O4[J]. PHYSICAL REVIEW B,2018,97(17):174102. |
| APA | Menendez, C.,Cazorla, C.,Samanta, S.,Li, XD.,Lu, JL.,...&Rahman, S.(2018).Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr2O4.PHYSICAL REVIEW B,97(17),174102. |
| MLA | Menendez, C,et al."Pressure-induced structural and semiconductor-semiconductor transitions in Co0.5Mg0.5Cr2O4".PHYSICAL REVIEW B 97.17(2018):174102. |
入库方式： OAI收割
来源：高能物理研究所
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