Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4
文献类型：期刊论文
| 作者 | Xu, W ; Marcelli, A; Hu, TD; Zhu YC(朱英才); Zhu, YC; Liu, Y; Tan, X; Ren, GK; Yu, MJ; Xu W(徐伟)
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| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2018 |
| 卷号 | 8期号:4页码:45218 |
| ISSN号 | 2158-3226 |
| DOI | 10.1063/1.5025482 |
| 文献子类 | Article |
| 英文摘要 | Quaternary chalcogenide Cu2ZnSnSe4 (CZTSe) is a promising wide band-gap p-type thermoelectric material. The structure and thermoelectric properties of lead substituted Cu2ZnSn1-xPbxSe4 are investigated. Lead primarily exists in the framework of PbSe as demonstrated by x-ray diffraction and calculation of x-ray absorption near-edge structure spectroscopy. The second phase distributes at the boundaries of CZTSe with thickness in several hundreds of nanometer. With appropriate grain boundary engineering, the enhancement of power factor and a decrease of thermal conductivity can be achieved simultaneously. As a result, a maximum figure of merit zT of 0.45 is obtained for the sample with x = 0.02 at 723K. (c) 2018Author(s). |
| WOS关键词 | BULK THERMOELECTRICS ; NANOCRYSTALS |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000435454600066 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286030]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 通讯作者 | Xu W(徐伟) |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Xu, W,Marcelli, A,Hu, TD,et al. Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4[J]. AIP ADVANCES,2018,8(4):45218. |
| APA | Xu, W.,Marcelli, A.,Hu, TD.,朱英才.,Zhu, YC.,...&于梅娟.(2018).Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4.AIP ADVANCES,8(4),45218. |
| MLA | Xu, W,et al."Enhanced thermoelectric performance through grain boundary engineering in quaternary chalcogenide Cu2ZnSnSe4".AIP ADVANCES 8.4(2018):45218. |
入库方式： OAI收割
来源：高能物理研究所
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