Dirac Signature in Germanene on Semiconducting Substrate
文献类型：期刊论文
| 作者 | Zhuang, JC; Liu C(刘晨) ; Liu, C; Zhou, ZY; Casillas, G; Feng, HF; Xu, X; Wang, JO; Hao, WC; Wang, XL
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| 刊名 | ADVANCED SCIENCE
 |
| 出版日期 | 2018 |
| 卷号 | 5期号:7页码:1800207 |
| 关键词 | 2D materials Dirac fermions field-effect transistors germanene scanning tunneling microscopy transmission electron microscopy |
| ISSN号 | 2198-3844 |
| DOI | 10.1002/advs.201800207 |
| 文献子类 | Article |
| 英文摘要 | 2D Dirac materials supported by nonmetallic substrates are of particular interest due to their significance for the realization of the quantum spin Hall effect and their application in field-effect transistors. Here, monolayer germanene is successfully fabricated on semiconducting germanium film with the support of a Ag(111) substrate. Its linear-like energy-momentum dispersion and large Fermi velocity are derived from the pronounced quasiparticle interference patterns in a root 3 x root 3 superstructure. In addition to Dirac fermion characteristics, the theoretical simulations reveal that the energy gap opens at the Brillouin zone center of the root 3 x root 3 restructured germanene, which is evoked by the symmetry-breaking perturbation potential. These results demonstrate that the germanium nanosheets with root 3 x root 3 germanene can be an ideal platform for fundamental research and for the realization of high-speed and low-energy-consumption field-effect transistors. |
| WOS关键词 | TOTAL-ENERGY CALCULATIONS ; WAVE BASIS-SET ; AG(111) SURFACE ; SILICENE ; GRAPHENE ; LAYER ; AL(111) |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science |
| 语种 | 英语 |
| WOS记录号 | WOS:000439842100028 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286155]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 通讯作者 | Wang JO(王嘉鸥) |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Zhuang, JC,Liu C,Liu, C,et al. Dirac Signature in Germanene on Semiconducting Substrate[J]. ADVANCED SCIENCE,2018,5(7):1800207. |
| APA | Zhuang, JC.,刘晨.,Liu, C.,Zhou, ZY.,Casillas, G.,...&王嘉鸥.(2018).Dirac Signature in Germanene on Semiconducting Substrate.ADVANCED SCIENCE,5(7),1800207. |
| MLA | Zhuang, JC,et al."Dirac Signature in Germanene on Semiconducting Substrate".ADVANCED SCIENCE 5.7(2018):1800207. |
入库方式： OAI收割
来源：高能物理研究所
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