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Silicon carbide PIN diode detectors used in harsh neutron irradiation

文献类型：期刊论文

;
作者Liu, LY; Li, FP; Bai, S; Jin, P; Cao, XZ; Ouyang, XP; Cao XZ(曹兴忠)
刊名SENSORS AND ACTUATORS A-PHYSICAL ; SENSORS AND ACTUATORS A-PHYSICAL
出版日期2018 ; 2018
卷号280页码:245-251
关键词Silicon carbide Silicon carbide Neutron detector Performance degradation Irradiation defect Neutron detector Performance degradation Irradiation defect
ISSN号0924-4247 ; 0924-4247
DOI10.1016/j.sna.2018.07.053 ; 10.1016/j.sna.2018.07.053
文献子类Article ; Article
英文摘要Silicon carbide (SiC) neutron detectors based on PIN diode with Ti/Au electrode structure have been successfully developed and considered to be a good option for neutron detection related to harsh radiation environment, but these detectors suffered inevitable irradiation damage and performance degradation, ultimately damaged the applications severely. Unfortunately, the systematic research focusing on the degradation and irradiation defects is lack, and the mechanism of degradation is not clear yet. In this paper, these issues are carefully studied: SiC detectors were irradiated by neutrons emitted from fusion neutron generator and nuclear reactor with fluence ranging from 1 x 10(14) n/cm(2) to 2 x 10(16) n/cm(2), then the performance degradation and neutron induced defects were carefully investigated. It is concluded that the SiC detectors could endure neutron irradiation as least 10(16) n/cm(2). Although neutron irradiation could induce breakdown of PN junction, decrease of charge collection efficiency and worsening of energy resolution, all the detectors are still alive; furthermore, they could still acquire integrated response spectra to alpha particles with neglectable increase of dark current at neutron fluence of 2 x 10(16) n/cm(2). The di-carbon antisite defects and vacancy-type defects induced by neutron irradiation should be responsible for the performance degradation, according to low temperature photoluminescence and positron annihilation Doppler broadening measurements. Possible degradation mechanism was discussed as well. (C) 2018 Elsevier B.V. All rights reserved.; Silicon carbide (SiC) neutron detectors based on PIN diode with Ti/Au electrode structure have been successfully developed and considered to be a good option for neutron detection related to harsh radiation environment, but these detectors suffered inevitable irradiation damage and performance degradation, ultimately damaged the applications severely. Unfortunately, the systematic research focusing on the degradation and irradiation defects is lack, and the mechanism of degradation is not clear yet. In this paper, these issues are carefully studied: SiC detectors were irradiated by neutrons emitted from fusion neutron generator and nuclear reactor with fluence ranging from 1 x 10(14) n/cm(2) to 2 x 10(16) n/cm(2), then the performance degradation and neutron induced defects were carefully investigated. It is concluded that the SiC detectors could endure neutron irradiation as least 10(16) n/cm(2). Although neutron irradiation could induce breakdown of PN junction, decrease of charge collection efficiency and worsening of energy resolution, all the detectors are still alive; furthermore, they could still acquire integrated response spectra to alpha particles with neglectable increase of dark current at neutron fluence of 2 x 10(16) n/cm(2). The di-carbon antisite defects and vacancy-type defects induced by neutron irradiation should be responsible for the performance degradation, according to low temperature photoluminescence and positron annihilation Doppler broadening measurements. Possible degradation mechanism was discussed as well. (C) 2018 Elsevier B.V. All rights reserved.
WOS关键词4H-SIC SCHOTTKY DIODES ; 4H-SIC SCHOTTKY DIODES ; RADIATION ; RADIATION
WOS研究方向Engineering ; Engineering ; Instruments & Instrumentation ; Instruments & Instrumentation
语种英语 ; 英语
WOS记录号WOS:000447097200031 ; WOS:000447097200031
源URL[http://ir.ihep.ac.cn/handle/311005/286407]  
专题高能物理研究所_多学科研究中心
高能物理研究所_加速器中心
通讯作者Cao XZ(曹兴忠)
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714		 Liu, LY,Li, FP,Bai, S,et al. Silicon carbide PIN diode detectors used in harsh neutron irradiation, Silicon carbide PIN diode detectors used in harsh neutron irradiation[J]. SENSORS AND ACTUATORS A-PHYSICAL, SENSORS AND ACTUATORS A-PHYSICAL,2018, 2018,280, 280:245-251, 245-251.
APA Liu, LY.,Li, FP.,Bai, S.,Jin, P.,Cao, XZ.,...&曹兴忠.(2018).Silicon carbide PIN diode detectors used in harsh neutron irradiation.SENSORS AND ACTUATORS A-PHYSICAL,280,245-251.
MLA Liu, LY,et al."Silicon carbide PIN diode detectors used in harsh neutron irradiation".SENSORS AND ACTUATORS A-PHYSICAL 280(2018):245-251.

入库方式： OAI收割

来源：高能物理研究所

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