Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yang, Xinju; Jia QJ(贾全杰) ; Jiang, Zuimin; Jia, Quanjie; Zhong, Zhenyang; Dong, Zuoru; Hu, Xiaofeng; Zhu, Guangjian; Wang, Liming; Liu, Tao
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| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2018 |
| 卷号 | 33期号:12页码:125022 |
| 关键词 | GeSn dislocation-related photoluminescence molecular beam epitaxy microstructure x-ray diffraction reciprocal space mapping |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/1361-6641/aaed82 |
| 文献子类 | Article |
| 英文摘要 | This paper reports the dislocation-related photoluminescence (PL) in GeSn films The GeSn film samples with Sn content of 1%-7.4% were grown on Ge (001) substrates by molecular beam epitaxy at low temperatures. Dislocations at the interface between the GeSn and the Ge buffer layer as well as the threading dislocations throughout the GeSn layer were observed for the annealed samples, but not for the as-grown samples. PL peaks of the annealed GeSn film samples show a significant red shift with increasing Sn content. However, a large energy difference (122 meV) between the PL peak energy and theoretically calculated indirect bandgap energy was found for all the GeSn films with different Sn contents. Furthermore, the PL peak position as a function of temperature could be well fitted by the calculated E g -T line, indicating that the PL observed in the GeSn films is dislocation-related PL. |
| 电子版国际标准刊号 | 1361-6641 |
| WOS关键词 | ROOM-TEMPERATURE ; LIGHT-EMISSION ; ENGINEERED SILICON ; OPTICAL-PROPERTIES ; SI ; GERMANIUM ; STRAIN ; ALLOYS ; LAYERS ; LASER |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000450304600001 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/286895]  |
| 专题 | 高能物理研究所_多学科研究中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | Yang, Xinju,Jia QJ,Jiang, Zuimin,et al. Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33(12):125022. |
| APA | Yang, Xinju.,贾全杰.,Jiang, Zuimin.,Jia, Quanjie.,Zhong, Zhenyang.,...&Liu, Tao.(2018).Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33(12),125022. |
| MLA | Yang, Xinju,et al."Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33.12(2018):125022. |
入库方式： OAI收割
来源：高能物理研究所
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