Exploiting the optical and luminescence characteristic of quantum dots for optical device fabrication
文献类型：期刊论文
| 作者 | Suriyaprakash, J1; Qiao, TT |
| 刊名 | APPLIED NANOSCIENCE
 |
| 出版日期 | 2018-04-01 |
| 卷号 | 8期号:4页码:609-616 |
| 关键词 | Quantum dots Optical property Nanocomposite Ellipsometry Absorbance Luminescence |
| ISSN号 | 2190-5509 |
| DOI | 10.1007/s13204-018-0642-y |
| 英文摘要 | One can design a robust optical device by engineering the optical band gap of the quantum dots (QDs) owing to their sizetunable quantum confinement effect. To do this, understanding the optical effects of QDs and composite materials is crucial. In this context, various sizes (2.8-4.2 nm) of CdSe QDs-PMMA nanocomposite are fabricated in a two-step process and their absorbance, luminescence and optical constants studied systematically. The ellipsometry spectroscopic analysis exhibits the heterogeneous medium feature of. value and also the measured refractive index (1.51-1.59) values are increased with decreased band gap (2.24-2.10 eV). The observed red shift in the UV-Vis and photoluminescence spectra is indicative of early stage CdSe QD followed by a nucleation process of bigger size QD. In addition, the growth kinetics of the reaction and the band gap of the QDs are evaluated with respect to the time to testify the colloidal QDs formation. The thickness and QD composition of the nanocomposite thin films calculated by effective medium approximation are 100 nm and 8-12%, respectively. Morphology and structural feature transmission electron microscopy study of the fabricated nanocomposite demonstrated that spherical CdSe QDs are well dispersed in PMMA. |
| 学科主题 | Nanoscience & Nanotechnology |
| 语种 | 英语 |
| WOS记录号 | WOS:000442668300004 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/80208]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang, Liaoning, Peoples R China 2.PSG Coll Technol, Dept Chem, Coimbatore, Tamil Nadu, India 3.Shenyang Pharmaceut Univ, Shenyang, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Suriyaprakash, J,Qiao, TT. Exploiting the optical and luminescence characteristic of quantum dots for optical device fabrication[J]. APPLIED NANOSCIENCE,2018,8(4):609-616. |
| APA | Suriyaprakash, J,&Qiao, TT.(2018).Exploiting the optical and luminescence characteristic of quantum dots for optical device fabrication.APPLIED NANOSCIENCE,8(4),609-616. |
| MLA | Suriyaprakash, J,et al."Exploiting the optical and luminescence characteristic of quantum dots for optical device fabrication".APPLIED NANOSCIENCE 8.4(2018):609-616. |
入库方式： OAI收割
来源：金属研究所
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