Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure
文献类型：期刊论文
| 作者 | Chen, MJ; Ning, XK; Fu, GS; Wang, SF; Wang, F1; Yu, T2; Liu, P; Wang, JL; Liu, W1; Zhang, ZD |
| 刊名 | APPLIED PHYSICS EXPRESS
 |
| 出版日期 | 2018-07-01 |
| 卷号 | 11期号:7页码:- |
| ISSN号 | 1882-0778 |
| DOI | 10.7567/APEX.11.075701 |
| 英文摘要 | Understanding and controlling the metal-insulator transition (MIT) can provide great opportunities for electronic devices. Here, artificial LaNiO3/(NiO)(n)/LaNiO3 has been synthesized. MIT temperatures have been tuned by changing the thickness of the artificial NiO insert layer. The Ni 2p core-level spectra and O K-edge have been investigated. The linear relationship between the hybridization T (or bandwidth W) and the MIT temperature has been clearly demonstrated. In this work, we realized the Mott ground state by modulating the parameters of T and the covalency W, which might be significant for the development of multifunctional materials. (C) 2018 The Japan Society of Applied Physics |
| 学科主题 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000435632600001 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/80123]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, MJ,Ning, XK,Fu, GS,et al. Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure[J]. APPLIED PHYSICS EXPRESS,2018,11(7):-. |
| APA | Chen, MJ.,Ning, XK.,Fu, GS.,Wang, SF.,Wang, F.,...&Zhang, ZD.(2018).Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure.APPLIED PHYSICS EXPRESS,11(7),-. |
| MLA | Chen, MJ,et al."Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure".APPLIED PHYSICS EXPRESS 11.7(2018):-. |
入库方式： OAI收割
来源：金属研究所
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