Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor
文献类型：期刊论文
| 作者 | Wang, Z1; Zhang, TY; Ding, M4; Dong, BJ; Li, YX; Chen, ML; Li, XX; Huang, JQ; Wang, HW; Zhao, XT |
| 刊名 | NATURE NANOTECHNOLOGY
 |
| 出版日期 | 2018-07-01 |
| 卷号 | 13期号:7页码:554-+ |
| ISSN号 | 1748-3387 |
| DOI | 10.1038/s41565-018-0186-z |
| 英文摘要 | Manipulating a quantum state via electrostatic gating has been of great importance for many model systems in nanoelectronics. Until now, however, controlling the electron spins or, more specifically, the magnetism of a system by electricfield tuning has proven challenging(1-4). Recently, atomically thin magnetic semiconductors have attracted significant attention due to their emerging new physical phenomena(5-13). However, many issues are yet to be resolved to convincingly demonstrate gate-controllable magnetism in these twodimensional materials. Here, we show that, via electrostatic gating, a strong field effect can be observed in devices based on few-layered ferromagnetic semiconducting Cr2Ge2Te6. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate bipolar tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment rebalance in the spin-polarized band structure. Our findings of electric-field-controlled magnetism in van der Waals magnets show possibilities for potential applications in new-generation magnetic memory storage, sensors and spintronics. |
| 学科主题 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000438113700015 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/80117]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei, Anhui, Peoples R China 3.Shanxi Univ, Inst Optoelect, State Key Lab Quantum Opt & Quantum Opt Devices, Taiyuan, Shanxi, Peoples R China 4.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan, Shanxi, Peoples R China 5.Changsha Univ Sci Technol, Coll Mat Sci & Engn, Changsha, Hunan, Peoples R China 6.Chongqing Univ, Sch Mat Sci & Engn, State Key Lab Mech Transmiss, Chongqing, Peoples R China 7.Liaoning Shihua Univ, Coll Sci, Fushun, Peoples R China 8.Peking Univ, State Key Lab Mesoscop Phys, Beijing, Peoples R China 9.Peking Univ, Sch Phys, Beijing, Peoples R China 10.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Z,Zhang, TY,Ding, M,et al. Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor[J]. NATURE NANOTECHNOLOGY,2018,13(7):554-+. |
| APA | Wang, Z.,Zhang, TY.,Ding, M.,Dong, BJ.,Li, YX.,...&Zhang, ZD.(2018).Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor.NATURE NANOTECHNOLOGY,13(7),554-+. |
| MLA | Wang, Z,et al."Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor".NATURE NANOTECHNOLOGY 13.7(2018):554-+. |
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来源：金属研究所
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