Selective growth of semiconducting single-wall carbon nanotubes using SiC as a catalyst
文献类型：期刊论文
| 作者 | Cheng, M2; Wang, BW; Hou, PX; Li, JC; Zhang, F; Luan, J; Cong, HT; Liu, C1; Cheng, HM |
| 刊名 | CARBON
 |
| 出版日期 | 2018-08-01 |
| 卷号 | 135页码:195-201 |
| ISSN号 | 0008-6223 |
| DOI | 10.1016/j.carbon.2018.04.047 |
| 英文摘要 | Semiconducting single-wall carbon nanotubes (s-SWCNTs) without metal impurities are highly desired for use in high-performance field effect transistors as a channel material. Here we use SiC nanoparticles as a catalyst to selectively grow s-SWCNTs. The Si atoms on the surface of the SiC nanoparticles are found to be depleted during thermal treatment, and carbon atoms are exposed, which leads to the formation of carbon nanocaps on the SiC nanoparticles. Under a hydrogen atmosphere, the chemically active metallic carbon caps are preferentially etched away so that high purity s-SWCNTs with a content of similar to 95% without any residue metal impurities are obtained by the chemical vapor deposition of ethanol and can be used to fabricate high-performance thin film transistors. (C) 2018 Elsevier Ltd. All rights reserved. |
| 学科主题 | Chemistry, Physical ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000436800100022 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/80076]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Tsinghua Berkeley Shenzhen Inst, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cheng, M,Wang, BW,Hou, PX,et al. Selective growth of semiconducting single-wall carbon nanotubes using SiC as a catalyst[J]. CARBON,2018,135:195-201. |
| APA | Cheng, M.,Wang, BW.,Hou, PX.,Li, JC.,Zhang, F.,...&Cheng, HM.(2018).Selective growth of semiconducting single-wall carbon nanotubes using SiC as a catalyst.CARBON,135,195-201. |
| MLA | Cheng, M,et al."Selective growth of semiconducting single-wall carbon nanotubes using SiC as a catalyst".CARBON 135(2018):195-201. |
入库方式： OAI收割
来源：金属研究所
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