Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package
文献类型：期刊论文
| 作者 | Gao, LY; Zhang, H; Li, CF; Guo, JD; Liu, ZQ |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2018-08-01 |
| 卷号 | 34期号:8页码:1305-1314 |
| 关键词 | Fe-Ni under bump metallization (UBM) Intermetallic compounds (IMCs) Electromigration (EM) Diffusion Vacancy formation |
| ISSN号 | 1005-0302 |
| DOI | 10.1016/j.jmst.2017.11.046 |
| 英文摘要 | Fe-Ni films with compositions of 73 wt% of Ni and 45 wt% of Ni were used as under bump metallization (UBM) in wafer level chip scale package, and their reliability was evaluated through electromigration (EM) test compared with commercial Cu UBM. For Sn3.8Ag0.7Cu(SAC)/Cu solder joints, voids had initiated at Cu cathode after 300 h and typical failures of depletion of Cu cathode and cracks were detected after 1000 h EM. While the SAC/Fe-Ni solder joints kept at a perfect condition without any failures after 1000 h EM. Moreover, the characteristic lifetime calculated by Weibull analysis for Fe-73Ni UBM (2121 h), Fe-45Ni UBM (2340h) were both over three folds to Cu UBM's (698h). The failure modes for Fe-Ni solder joints varied with the different growth behavior of intermetallic compounds (IMCs), which can all be classified as the crack at the cathodic interface between solder and outer IMC layer. The atomic fluxes concerned cathode dissolution and crack initiation were analyzed. When Fe-Ni UBM was added, cathode dissolution was suppressed due to the low diffusivity of IMCs and opposite transferring direction to electron flow of Fe atoms. The smaller EM flux within solder material led a smaller vacancy flux in Fe-Ni solder joints, which can explain the delay of solder voids and cracks as well as the much longer lifetime under EM. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 学科主题 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000437810000005 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/80064]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.[Gao, Li-Yin 2.Zhang, Hao 3.Li, Cai-Fu 4.Guo, Jingdong 5.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 6.[Gao, Li-Yin 7.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 8.[Zhang, Hao 9.Li, Cai-Fu 10.Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Osaka 5670047, Japan |
| 推荐引用方式 GB/T 7714 | Gao, LY,Zhang, H,Li, CF,et al. Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(8):1305-1314. |
| APA | Gao, LY,Zhang, H,Li, CF,Guo, JD,&Liu, ZQ.(2018).Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(8),1305-1314. |
| MLA | Gao, LY,et al."Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.8(2018):1305-1314. |
入库方式： OAI收割
来源：金属研究所
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