Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate
文献类型：期刊论文
| 作者 | Yi, Y; Xiong, Y1; Zhuang, H1; Yang, B2; Wang, B; Jiang, X1,2 |
| 刊名 | SURFACE & COATINGS TECHNOLOGY
 |
| 出版日期 | 2018-09-15 |
| 卷号 | 349页码:959-962 |
| 关键词 | Bias-enhanced nucleation Tetramethylsilane Diamond nuclei Nucleation behavior HRTEM |
| ISSN号 | 0257-8972 |
| DOI | 10.1016/j.surfcoat.2018.06.087 |
| 英文摘要 | This paper describes the effect of tetramethylsilane (TMS) on diamond nucleation on Si substrate under an applied bias voltage of 120 V, performed in a modified microwave plasma chemical vapor deposition (MPCVD) reactor. The introduction of TMS in the CH4/H-2 plasma leads to a significant enhancement of nucleation density of diamond nuclei, namely from (3.7 +/- 0.2) x 10(7)/cm(2) without the introduction of TMS to (4.7 +/- 0.5) x 10(10)/cm(2) at the TMS flow rate of 4 sccm. On the contrary, further increasing in the TMS flow rate to 8 sccm slightly reduces the nucleation density of diamond nuclei to (2.1 +/- 0.3) x 10(10)/cm(2), along with the increase in average size of diamond nuclei. High-resolution transmission electron microscopy (HRTEM) and Xray photoelectron spectroscopy (XPS) allow us to study the microstructural and chemical composition evolution of Si/diamond interface. The obtained results suggest that bias-enhanced nucleation of diamond on Si substrate exhibits a direct relationship with the TMS flow rate. |
| 学科主题 | Materials Science, Coatings & Films ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000441492600100 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79962]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Peoples R China 2.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany 3.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yi, Y,Xiong, Y,Zhuang, H,et al. Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate[J]. SURFACE & COATINGS TECHNOLOGY,2018,349:959-962. |
| APA | Yi, Y,Xiong, Y,Zhuang, H,Yang, B,Wang, B,&Jiang, X.(2018).Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate.SURFACE & COATINGS TECHNOLOGY,349,959-962. |
| MLA | Yi, Y,et al."Tetramethysilane-assisted enhancement of diamond nucleation on silicon substrate".SURFACE & COATINGS TECHNOLOGY 349(2018):959-962. |
入库方式： OAI收割
来源：金属研究所
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