High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate
文献类型：期刊论文
| 作者 | Zhang, XL; Jiang, YA; Liu, BD; Yang, WJ; Li, J; Niu, PJ; Jiang, X |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2018-09-25 |
| 卷号 | 762页码:933-940 |
| 关键词 | MnWO4 nanoplates Phototransistors High electron mobility Excellent optoelectronic performance |
| ISSN号 | 0925-8388 |
| DOI | 10.1016/j.jallcom.2018.05.190 |
| 英文摘要 | MnWO4 nano-materials have been attracting intensive attention as a potential candidate for modern electronic and optoelectronic nanodevices. However, the availability of highly crystalline MnWO4 nanostructures with controllable geometry shapes still remains a great challenge and further hinders their technologically important applications in optoelectronic devices. Herein, large yield and crystalline MnWO4 nanoplates with regular crystal facets are synthesized on Ti substrate based on a conventional plasma electrolytic oxidation (PEO) process followed by a thermal annealing method. The phototransistor based on individual high electron mobility MnWO4 nanoplate has been fabricated and it shows a classical n-type semiconductor behavior with superior field emission transistor (FET) properties including a very low threshold voltage of 1 V and a high peak transconductance of 2.7 mu S. Furthermore, the MnWO4 phototransistor also exhibits fast photoresponse time and high photoresponsivity under light illumination. All these unique characteristics of incident-light control and gate regulation from the MnWO4 nanoplate are expected to further promote its potential applications in multifunctional optoelectronic devices in the future. (C) 2018 Elsevier B.V. All rights reserved. |
| 学科主题 | Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000436600000110 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79957]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Chinese Acad Sci, IMR, Shenyang Natl Lab Mat Sci SYNL, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Tianjin Polytech Univ, Sch Elect Engn & Automat, 399 Binshuixi Rd, Tianjin 300387, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, XL,Jiang, YA,Liu, BD,et al. High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2018,762:933-940. |
| APA | Zhang, XL.,Jiang, YA.,Liu, BD.,Yang, WJ.,Li, J.,...&Jiang, X.(2018).High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate.JOURNAL OF ALLOYS AND COMPOUNDS,762,933-940. |
| MLA | Zhang, XL,et al."High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate".JOURNAL OF ALLOYS AND COMPOUNDS 762(2018):933-940. |
入库方式： OAI收割
来源：金属研究所
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