Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
文献类型：期刊论文
| 作者 | Wang, ZH; Gao, XPA; Zhang, ZD |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2018-10-01 |
| 卷号 | 27期号:10页码:- |
| 关键词 | transport properties interfaces heterostructures nanostructures doping magnetoresistance |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/27/10/107901 |
| 英文摘要 | In this review article, the recent experimental and theoretical research progress in Bi2Se3- and Bi2Te3-based topological insulators is presented, with a focus on the transport properties and modulation of the transport properties by doping with nonmagnetic and magnetic elements. The electrical transport properties are discussed for a few different types of topological insulator heterostructures, such as heterostructures formed by Bi2Se3- and Bi2Te3-based binary/ternary/quaternary compounds and superconductors, nonmagnetic and magnetic metals, or semiconductors. |
| 学科主题 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000448165300001 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79914]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.[Wang, Zhen-Hua 2.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 3.[Gao, Xuan P. A.] Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA |
| 推荐引用方式 GB/T 7714 | Wang, ZH,Gao, XPA,Zhang, ZD. Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures[J]. CHINESE PHYSICS B,2018,27(10):-. |
| APA | Wang, ZH,Gao, XPA,&Zhang, ZD.(2018).Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures.CHINESE PHYSICS B,27(10),-. |
| MLA | Wang, ZH,et al."Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures".CHINESE PHYSICS B 27.10(2018):-. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。