Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect
文献类型:期刊论文
作者 | Zhu, QS; Zhang, X; Li, SJ; Liu, CZ; Li, CF |
刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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出版日期 | 2018-11-09 |
卷号 | 166期号:1页码:D3097-D3099 |
ISSN号 | 0013-4651 |
DOI | 10.1149/2.0131901jes |
英文摘要 | Large-scale Cu nanotwins were electrodeposited in void-free filling within blind microvia using single gelatin as additive in electrolyte. The void-free filling effect was might be caused by a gradient suppressing effect of gelatin along the microvia depth. The gradient distribution of gelatin was resulted from the strong dependence of adsorption on convection force. The adsorbed gelatin might greatly increase the surface tension on the depositing atom plane and then dragged a layer of adatom to a misarranged sites in the lattice, leading to the twinning nucleation. (C) The Author(s) 2018. Published by ECS. |
学科主题 | Electrochemistry ; Materials Science, Coatings & Films |
语种 | 英语 |
WOS记录号 | WOS:000449759700001 |
源URL | [http://ir.imr.ac.cn/handle/321006/79827] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.Shenyang Aerosp Univ, Coll Mat Sci & Engn, Shenyang 110136, Liaoning, Peoples R China 3.Osaka Univ Ibaraki, Inst Sci & Ind Res, Osaka, Japan |
推荐引用方式 GB/T 7714 | Zhu, QS,Zhang, X,Li, SJ,et al. Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2018,166(1):D3097-D3099. |
APA | Zhu, QS,Zhang, X,Li, SJ,Liu, CZ,&Li, CF.(2018).Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,166(1),D3097-D3099. |
MLA | Zhu, QS,et al."Communication-Electrodeposition of Nano-Twinned Cu in Void-Free Filling for Blind Microvia of High Density Interconnect".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 166.1(2018):D3097-D3099. |
入库方式: OAI收割
来源:金属研究所
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