Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters
文献类型：期刊论文
| 作者 | Jia, XY; Huang, N; Guo, YN; Liu, LS; Li, P; Zhai, ZF; Yang, B; Yuan, ZY; Shi, D1; Jiang, X2 |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
 |
| 出版日期 | 2018-12-01 |
| 卷号 | 34期号:12页码:2398-2406 |
| ISSN号 | 1005-0302 |
| 关键词 | Microwave plasma enhanced CVD Diamond films Morphological transformation Electron field emission |
| DOI | 10.1016/j.jmst.2018.04.021 |
| 英文摘要 | In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition (CVD) over a wide range of experimental parameters. The effects of the microwave power, CH4/H-2 ratio and gas pressure on the morphology, growth rate, composition, and quality of diamond films were investigated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). A rise of microwave power can lead to an increasing pyrolysis of hydrogen and methane, so that the microcrystalline diamond film could be synthesized at low CH4/H-2 levels. Gas pressure has similar effect in changing the morphology of diamond films, and high gas pressure also results in dramatically increased grain size. However, diamond film is deteriorated at high CH4/H-2 ratio due to the abundant graphite content including in the films. Under an extreme condition of high microwave power of 10 kW and high CH4 concentration, a hybrid film composed of diamond/graphite was successfully formed in the absence of N-2 or Ar, which is different from other reports. This composite structure has an excellent measured sheet resistance of 10-100 Omega/Sqr. which allows it to be utilized as field electron emitter. The diamond/graphite hybrid nanostructure displays excellent electron field emission (EFE) properties with a low turn-on field of 2.17 V/mu m and beta = 3160, therefore it could be a promising alternative in field emission applications. (C) 2018 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology. |
| 学科主题 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000443274500024 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79806]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China 3.Univ Siegen, Inst Mat Engn, Paul Bonatz Str 9-11, D-57076 Siegen, Germany |
| 推荐引用方式 GB/T 7714 | Jia, XY,Huang, N,Guo, YN,et al. Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(12):2398-2406. |
| APA | Jia, XY.,Huang, N.,Guo, YN.,Liu, LS.,Li, P.,...&Jiang, X.(2018).Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(12),2398-2406. |
| MLA | Jia, XY,et al."Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.12(2018):2398-2406. |
入库方式： OAI收割
来源：金属研究所
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