Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe via Introducing Sn Vacancies
文献类型：期刊论文
| 作者 | Wei, W; Chang, C; Yang, T; Liu, JZ; Tang, HC; Zhang, J; Li, YS; Xu, F; Zhang, ZD; Li, JF |
| 刊名 | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
 |
| 出版日期 | 2018-01-10 |
| 卷号 | 140期号:1页码:499-505 |
| 关键词 | Performance Bulk Thermoelectrics Thermal-conductivity Crystals Bicuseo |
| ISSN号 | 0002-7863 |
| 英文摘要 | Thermoelectric power generation technology has emerged as a clean "heat engine" that can convert heat to electricity. Recently, the discovery of an ultrahigh thermoelectric figure of merit in SnSe crystals has drawn a great deal of attention. In view of their facile processing and scale-up applications, polycrystalline SnSe materials with ZT values comparable to those of the SnSe crystals are greatly desired. Here we achieve a record high ZT value similar to 2.1 at 873 K in polycrystalline Sn1-xSe with Sn vacancies. We demonstrate that the carrier concentration increases by artificially introducing Sn vacancies, contributing significantly to the enhancements of electrical conductivity and thermoelectric power factor. The detailed analysis of the data in the light of first-principles calculations results indicates that the increased carrier concentration can be attributed to the Sn-vacancy-induced Fermi level downshift and the interplay between the vacancy states and valence bands. Furthermore, vacancies break translation symmetry and thus enhance phonon scattering, leading to extralow thermal conductivity. Such high ZT value similar to 2.1 is achieved by synergistically optimizing both electrical- and thermal-transport properties of polycrystalline SnSe. The vast increase in ZT for polycrystalline SnSe may accelerate practical applications of this material in highly effective solid-state thermoelectric devices.; Thermoelectric power generation technology has emerged as a clean "heat engine" that can convert heat to electricity. Recently, the discovery of an ultrahigh thermoelectric figure of merit in SnSe crystals has drawn a great deal of attention. In view of their facile processing and scale-up applications, polycrystalline SnSe materials with ZT values comparable to those of the SnSe crystals are greatly desired. Here we achieve a record high ZT value similar to 2.1 at 873 K in polycrystalline Sn1-xSe with Sn vacancies. We demonstrate that the carrier concentration increases by artificially introducing Sn vacancies, contributing significantly to the enhancements of electrical conductivity and thermoelectric power factor. The detailed analysis of the data in the light of first-principles calculations results indicates that the increased carrier concentration can be attributed to the Sn-vacancy-induced Fermi level downshift and the interplay between the vacancy states and valence bands. Furthermore, vacancies break translation symmetry and thus enhance phonon scattering, leading to extralow thermal conductivity. Such high ZT value similar to 2.1 is achieved by synergistically optimizing both electrical- and thermal-transport properties of polycrystalline SnSe. The vast increase in ZT for polycrystalline SnSe may accelerate practical applications of this material in highly effective solid-state thermoelectric devices. |
| 学科主题 | Chemistry, Multidisciplinary |
| 语种 | 英语 |
| 资助机构 | National Key R&D Program of China [2017YFA0206301]; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation NSFC, China [U1537204]; National Natural Science Foundation of China [U1732153, 51571007, 51601094]; Natural Science Foundation of Jiangsu Province [BK20161495]; Priority Academic Program Development of Jiangsu Higher Education Institutions; Major Program of Aerospace Advanced Manufacturing Technology Research Foundation CASC, China [U1537204]; Fundamental Research Funds for the Central Universities [30917011206] |
| 公开日期 | 2018-06-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79587]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Tang, GD (reprint author), Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Jiangsu, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Wei, W,Chang, C,Yang, T,et al. Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe via Introducing Sn Vacancies[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2018,140(1):499-505. |
| APA | Wei, W.,Chang, C.,Yang, T.,Liu, JZ.,Tang, HC.,...&Tang, GD .(2018).Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe via Introducing Sn Vacancies.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,140(1),499-505. |
| MLA | Wei, W,et al."Achieving High Thermoelectric Figure of Merit in Polycrystalline SnSe via Introducing Sn Vacancies".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 140.1(2018):499-505. |
入库方式： OAI收割
来源：金属研究所
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