Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via
文献类型：期刊论文
| 作者 | Sun, FL; Liu, ZQ; Li, CF; Zhu, QS; Zhang, H; Suganuma, K; Zhu, QS (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Liu, ZQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.; Liu, ZQ (reprint author), Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan. |
| 刊名 | MATERIALS
 |
| 出版日期 | 2018-02-01 |
| 卷号 | 11期号:2页码:- |
| 关键词 | Columnar-grained Cu Twins Boundaries Nanoscale Strength Behavior Joints |
| ISSN号 | 1996-1944 |
| 英文摘要 | This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (similar to 4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm(2)) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.; This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (similar to 4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm(2)) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process. |
| 学科主题 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| 资助机构 | National Key R&D Program of China [2017YFB0305501]; Natural Science Foundation of China [51401218, 51471180]; Science and Technology Program of Shenyang [F16-205-1-18]; Osaka University Visiting Scholar Program [J135104902] |
| 公开日期 | 2018-06-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79533]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, ZQ; Zhu, QS (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Liu, ZQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.; Liu, ZQ (reprint author), Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan. |
| 推荐引用方式 GB/T 7714 | Sun, FL,Liu, ZQ,Li, CF,et al. Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via[J]. MATERIALS,2018,11(2):-. |
| APA | Sun, FL.,Liu, ZQ.,Li, CF.,Zhu, QS.,Zhang, H.,...&Liu, ZQ .(2018).Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via.MATERIALS,11(2),-. |
| MLA | Sun, FL,et al."Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via".MATERIALS 11.2(2018):-. |
入库方式： OAI收割
来源：金属研究所
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