Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel
文献类型：期刊论文
| 作者 | Fan, D; Lei, H; Guo, CQ; Qi, DL; Gong, J; Sun, C; Sun, C (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China. |
| 刊名 | ACTA METALLURGICA SINICA-ENGLISH LETTERS
 |
| 出版日期 | 2018-03-01 |
| 卷号 | 31期号:3页码:329-336 |
| 关键词 | Chromium Nitride Films Compressive Stress Residual-stresses Intrinsic Stress Magnetron Evolution Coatings Microstructure Deposition Profiles |
| ISSN号 | 1006-7191 |
| 英文摘要 | The reliability of a substrate curvature-based stress measurement method for CrN thin films on substrate with fluctuant surface was discussed. The stress error led by the ignorance of substrate thermal deformation was studied. Results showed that this error could be as large as several hundred MPa under general deposition conditions. Stress in the CrN thin films with different thicknesses ranging from 110 to 330 nm on stainless steel was studied by this method, in comparison with conventional results on silicon wafer. The thin films' morphology and structure were investigated and related to the film stress. A significant result of the comparison is that stress evolution in the thin films on steel obviously differs from that on silicon wafer, not only because the two substrates have different coefficients of thermal expansion, which provokes thermal stress, but also the considerable discrepancy in the thin films' grain coarsening rate and structure that induce different intrinsic stresses.; The reliability of a substrate curvature-based stress measurement method for CrN thin films on substrate with fluctuant surface was discussed. The stress error led by the ignorance of substrate thermal deformation was studied. Results showed that this error could be as large as several hundred MPa under general deposition conditions. Stress in the CrN thin films with different thicknesses ranging from 110 to 330 nm on stainless steel was studied by this method, in comparison with conventional results on silicon wafer. The thin films' morphology and structure were investigated and related to the film stress. A significant result of the comparison is that stress evolution in the thin films on steel obviously differs from that on silicon wafer, not only because the two substrates have different coefficients of thermal expansion, which provokes thermal stress, but also the considerable discrepancy in the thin films' grain coarsening rate and structure that induce different intrinsic stresses. |
| 学科主题 | Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| 公开日期 | 2018-06-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79455]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Lei, H; Sun, C (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Fan, D,Lei, H,Guo, CQ,et al. Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel[J]. ACTA METALLURGICA SINICA-ENGLISH LETTERS,2018,31(3):329-336. |
| APA | Fan, D.,Lei, H.,Guo, CQ.,Qi, DL.,Gong, J.,...&Sun, C .(2018).Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel.ACTA METALLURGICA SINICA-ENGLISH LETTERS,31(3),329-336. |
| MLA | Fan, D,et al."Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel".ACTA METALLURGICA SINICA-ENGLISH LETTERS 31.3(2018):329-336. |
入库方式： OAI收割
来源：金属研究所
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