Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures
文献类型：期刊论文
| 作者 | Bai, Y; Wang, ZJ; Cui, JZ; Zhang, ZD; Wang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China. |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2018-05-23 |
| 卷号 | 51期号:20页码:- |
| 关键词 | Metal/ferroelectric/semiconductor Tunnel-junctions Ferroelectric Thin-films Electroresistance Field |
| ISSN号 | 0022-3727 |
| 英文摘要 | Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials.; Improving the tunability of depletion layer width (DLW) in ferroelectric/semiconductor heterostructures is important for the performance of some devices. In this work, 200-nm-thick Pb(Zr0.4Ti0.6)O-3 (PZT) films were deposited on different Nb-doped SrTiO3 (NSTO) substrates, and the tunability of DLW at PZT/NSTO interfaces were studied. Our results showed that the maximum tunability of the DLW was achieved at the NSTO substrate with 0.5 wt% Nb. On the basis of the modified capacitance model and the ferroelectric semiconductor theory, we suggest that the tunability of the DLW in PZT/NSTO heterostructures can be attributed to a delicate balance of the depletion layer charge and the ferroelectric polarization charge. Therefore, the performance of some devices related to the tunability of DLW in ferroelectric/ semiconductor heterostructures can be improved by modulating the doping concentration in semiconducting electrode materials. |
| 学科主题 | Physics, Applied |
| 语种 | 英语 |
| 资助机构 | Chinese Academy of Sciences; National Natural Science Foundation of China [51172238] |
| 公开日期 | 2018-06-05 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79302]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, ZJ (reprint author), Northeastern Univ, Sch Mat Sci & Engn, Shenyang 110819, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZJ (reprint author), Shenyang Univ Technol, Sch Mat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Bai, Y,Wang, ZJ,Cui, JZ,et al. Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(20):-. |
| APA | Bai, Y.,Wang, ZJ.,Cui, JZ.,Zhang, ZD.,Wang, ZJ .,...&Wang, ZJ .(2018).Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(20),-. |
| MLA | Bai, Y,et al."Regulation of depletion layer width in Pb(Zr,Ti)O-3/Nb:SrTiO3 heterostructures".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.20(2018):-. |
入库方式： OAI收割
来源：金属研究所
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