High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states
文献类型：期刊论文
| 作者 | Li, Zhongwen; Wang, Yujia; Tian, Guo; Li, Peilian; Zhao, Lina; Zhang, Fengyuan; Yao, Junxiang; Fan, Hua; Song, Xiao; Chen, Deyang |
| 刊名 | AMER ASSOC ADVANCEMENT SCIENCE
 |
| 出版日期 | 2017-08-01 |
| 卷号 | 3期号:8页码:- |
| ISSN号 | 2375-2548 |
| 英文摘要 | The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as similar to 60nm. Wedemonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories.; The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for these applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high-density arrays of epitaxial BiFeO3 (BFO) ferroelectric nanodots with a lateral size as small as similar to 60nm. Wedemonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time but can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These results demonstrated that these reversibly switchable topological domain arrays are promising for applications in high-density nanoferroelectric devices such as nonvolatile memories. |
| 学科主题 | Multidisciplinary Sciences |
| 语种 | 英语 |
| 公开日期 | 2018-01-10 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79158]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Gao, XS; Liu, JM (reprint author), South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 21009, Jiangsu, Peoples R China.; Liu, JM (reprint author), Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 21009, Jiangsu, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Li, Zhongwen,Wang, Yujia,Tian, Guo,et al. High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states[J]. AMER ASSOC ADVANCEMENT SCIENCE,2017,3(8):-. |
| APA | Li, Zhongwen.,Wang, Yujia.,Tian, Guo.,Li, Peilian.,Zhao, Lina.,...&Liu, JM .(2017).High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states.AMER ASSOC ADVANCEMENT SCIENCE,3(8),-. |
| MLA | Li, Zhongwen,et al."High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states".AMER ASSOC ADVANCEMENT SCIENCE 3.8(2017):-. |
入库方式： OAI收割
来源：金属研究所
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