Ultrafast Growth of High-Quality Monolayer WSe2 on Au
文献类型：期刊论文
| 作者 | Gao, Yang; Hong, Yi-Lun; Yin, Li-Chang; Wu, Zhangting; Yang, Zhiqing; Chen, Mao-Lin; Liu, Zhibo; Ma, Teng; Sun, Dong-Ming; Ni, Zhenhua |
| 刊名 | WILEY-V C H VERLAG GMBH
 |
| 出版日期 | 2017-08-04 |
| 卷号 | 29期号:29页码:- |
| 关键词 | Chemical Vapor Deposition Monolayers Ultrafast Growth Wse2 |
| ISSN号 | 0935-9648 |
| 英文摘要 | The ultrafast growth of high-quality uniform monolayer WSe2 is reported with a growth rate of approximate to 26 mu m s(-1) by chemical vapor deposition on reusable Au substrate, which is approximate to 2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe2 domains in approximate to 30 s and large-area continuous films in approximate to 60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to approximate to 143 cm(2) V-1 s(-1) and ON/OFF ratio up to 9 x 10(6) at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate.; The ultrafast growth of high-quality uniform monolayer WSe2 is reported with a growth rate of approximate to 26 mu m s(-1) by chemical vapor deposition on reusable Au substrate, which is approximate to 2-3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter-size single-crystal WSe2 domains in approximate to 30 s and large-area continuous films in approximate to 60 s. Importantly, the ultrafast grown WSe2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to approximate to 143 cm(2) V-1 s(-1) and ON/OFF ratio up to 9 x 10(6) at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe2 on Au substrate. |
| 学科主题 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 资助机构 | Ministry of Science and Technology of the People's Republic of China [2016YFA0200101, 2016YFB0401104]; National Natural Science Foundation of China (NSFC) [51325205, 51290273, 51521091, 51472249, 51390473, 51272256, 61422406, 61574143]; Chinese Academy of Sciences [KGZD-EW-303-1, KGZD-EW-T06]; NSFC |
| 公开日期 | 2018-01-10 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79155]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ren, WC (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Gao, Yang,Hong, Yi-Lun,Yin, Li-Chang,et al. Ultrafast Growth of High-Quality Monolayer WSe2 on Au[J]. WILEY-V C H VERLAG GMBH,2017,29(29):-. |
| APA | Gao, Yang.,Hong, Yi-Lun.,Yin, Li-Chang.,Wu, Zhangting.,Yang, Zhiqing.,...&Ren, WC .(2017).Ultrafast Growth of High-Quality Monolayer WSe2 on Au.WILEY-V C H VERLAG GMBH,29(29),-. |
| MLA | Gao, Yang,et al."Ultrafast Growth of High-Quality Monolayer WSe2 on Au".WILEY-V C H VERLAG GMBH 29.29(2017):-. |
入库方式： OAI收割
来源：金属研究所
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