Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
文献类型：期刊论文
| 作者 | Li, Mingze; Wang, Zhenhua; Yang, Liang; Li, Da; Yao, Q. R.; Rao, G. H.; Gao, Xuan P. A.; Zhang, Zhidong; Wang, ZH (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZH (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China. |
| 刊名 | AMER PHYSICAL SOC
 |
| 出版日期 | 2017-08-24 |
| 卷号 | 96期号:7页码:- |
| ISSN号 | 2469-9950 |
| 英文摘要 | CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators.; CuxBi2Se3 is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of Bi2Se3 at x > 0.10. Here we report the synthesis and transport properties of Cu-doped CuxBi2Se3 films prepared by the chemical-vapor-deposition (CVD) method with 0.11 >= x >= 0. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline CuxBi2Se3 films exhibits a marked metallic downturn and an increase of carrier concentration below similar to 37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between Cu+ and Cu2+ conduction bands from the intercalated Cu+ and substituted Cu2+ sites in Bi2Se3 films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators. |
| 学科主题 | Physics, Condensed Matter |
| 语种 | 英语 |
| 资助机构 | National Natural Science Foundation of China [51522104, 51331006]; National Key R&D Program of China [2017YFA0206302]; National Science Foundation [DMR-1151534]; Guangxi National Science Foundation [2012GXNS-FGA060002] |
| 公开日期 | 2018-01-10 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79142]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Wang, ZH (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China.; Wang, ZH (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Li, Mingze,Wang, Zhenhua,Yang, Liang,et al. Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films[J]. AMER PHYSICAL SOC,2017,96(7):-. |
| APA | Li, Mingze.,Wang, Zhenhua.,Yang, Liang.,Li, Da.,Yao, Q. R..,...&Wang, ZH .(2017).Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films.AMER PHYSICAL SOC,96(7),-. |
| MLA | Li, Mingze,et al."Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films".AMER PHYSICAL SOC 96.7(2017):-. |
入库方式： OAI收割
来源：金属研究所
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