Selective Growth of Metal-Free Metallic and Semiconducting Single-Wall Carbon Nanotubes
文献类型：期刊论文
| 作者 | Zhang, Lili; Sun, Dong-Ming; Hou, Peng-Xiang; Liu, Chang; Liu, Tianyuan; Wen, Jianfeng; Tang, Nujiang; Luan, Jian; Shi, Chao; Li, Jin-Cheng |
| 刊名 | WILEY-V C H VERLAG GMBH
 |
| 出版日期 | 2017-08-25 |
| 卷号 | 29期号:32页码:- |
| 关键词 | Carbon Nanotubes Chemical Vapor Deposition Metal-free Selective Synthesis Thin-film Transistors |
| ISSN号 | 0935-9648 |
| 英文摘要 | A major obstacle for the use of single-wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT-based devices. Here, it is shown that by using silicon oxide (SiOx) nanoparticles as a catalyst, metal-free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiOx catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as-grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all-SWCNT thin-film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices.; A major obstacle for the use of single-wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT-based devices. Here, it is shown that by using silicon oxide (SiOx) nanoparticles as a catalyst, metal-free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiOx catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as-grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all-SWCNT thin-film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices. |
| 学科主题 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 资助机构 | Ministry of Science and Technology of China [2016YFA0200101, 2016YFB04001100, 2016YFA0200102]; National Natural Science Foundation of China [51532008, 51521091, 51625203, 51572264, 51372254, 51272256, 61574143, 61422406]; Chinese Academy of Sciences [KGZD-EW-T06]; CAS/SAFEA International Partnership Program for Creative Research Teams; Liaoning BaiQianWan Talents Program |
| 公开日期 | 2018-01-10 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79140]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Liu, C; Cheng, HM (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Zhang, Lili,Sun, Dong-Ming,Hou, Peng-Xiang,et al. Selective Growth of Metal-Free Metallic and Semiconducting Single-Wall Carbon Nanotubes[J]. WILEY-V C H VERLAG GMBH,2017,29(32):-. |
| APA | Zhang, Lili.,Sun, Dong-Ming.,Hou, Peng-Xiang.,Liu, Chang.,Liu, Tianyuan.,...&Cheng, HM .(2017).Selective Growth of Metal-Free Metallic and Semiconducting Single-Wall Carbon Nanotubes.WILEY-V C H VERLAG GMBH,29(32),-. |
| MLA | Zhang, Lili,et al."Selective Growth of Metal-Free Metallic and Semiconducting Single-Wall Carbon Nanotubes".WILEY-V C H VERLAG GMBH 29.32(2017):-. |
入库方式： OAI收割
来源：金属研究所
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