Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
文献类型：期刊论文
| 作者 | Li, Xiao-Xi; Fan, Zhi-Qiang; Liu, Pei-Zhi; Chen, Mao-Lin; Liu, Xin; Jia, Chuan-Kun; Sun, Dong-Ming; Jiang, Xiang-Wei; Han, Zheng; Bouchiat, Vincent |
| 刊名 | NATURE PUBLISHING GROUP
 |
| 出版日期 | 2017-10-17 |
| 卷号 | 8页码:- |
| ISSN号 | 2041-1723 |
| 英文摘要 | Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.; Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel. |
| 学科主题 | Multidisciplinary Sciences |
| 语种 | 英语 |
| 资助机构 | National Key R&D Program of China [2017YFA0206302]; National Basic Research Program of China (973 Grant) [2013CB921900, 2014CB920900]; National Natural Science Foundation of China (NSFC) [11504385, 51627801]; NSFC [11574304, 51272256, 61422406, 61574143, 11374021, 11774010, 51331006]; Chinese Academy of Sciences-Peking University Pioneer Cooperation Team (CAS-PKU Pioneer Cooperation Team); Youth Innovation Promotion Association CAS [2016109]; MSTC grant [2016YFB04001100]; CAS [KJZD-EW-M05-3]; EU FP7 Graphene Flagship [604391]; J2D project grant from Agence Nationale de la Recherche (ANR) [ANR-15-CE24-0017]; Hsun Lee Award program of the Institute of Metal Research, CAS |
| 公开日期 | 2018-01-10 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/79040]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Sun, DM; Han, Z (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Han, Z (reprint author), Univ Sci & Technol China, Sch Mat Sci & Engn, Hefei 230026, Anhui, Peoples R China.; Jiang, XW (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Li, Xiao-Xi,Fan, Zhi-Qiang,Liu, Pei-Zhi,et al. Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor[J]. NATURE PUBLISHING GROUP,2017,8:-. |
| APA | Li, Xiao-Xi.,Fan, Zhi-Qiang.,Liu, Pei-Zhi.,Chen, Mao-Lin.,Liu, Xin.,...&Jiang, XW .(2017).Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor.NATURE PUBLISHING GROUP,8,-. |
| MLA | Li, Xiao-Xi,et al."Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor".NATURE PUBLISHING GROUP 8(2017):-. |
入库方式： OAI收割
来源：金属研究所
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