Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC
文献类型：期刊论文
| 作者 | Hua, An; Wei, Feng; Pan, Desheng; Yang, Liang; Feng, Yang; Li, Mingze; Wang, Yu; An, Jing; Geng, Dianyu; Liu, Hongyang |
| 刊名 | AMER INST PHYSICS
 |
| 出版日期 | 2017-11-27 |
| 卷号 | 111期号:22页码:- |
| ISSN号 | 0003-6951 |
| 英文摘要 | SiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile (C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2-18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher epsilon '' and tan delta values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding -10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 mm. A minimum value of -42 dB at 8 GHz was also achieved. The mechanism of dielectric loss of nanoflake N-doped SiC is discussed in detail. Published by AIP Publishing.; SiC has amazing electromagnetic wave absorption properties based on its excellent dielectric properties. The optimized N-doping nano-SiC with in-situ tailored morphology by a facile one-step synthesis strategy is presented. By using a new N source and gas catalyst, acetonitrile (C2H3N) was exploited to synthesize N-doped nano-SiC with an evolution of morphology from spherical to nanoflake. The surface area of the nanoflake SiC is significantly expanded to support more quantity and types of electric dipoles. Combining the optimized N concentration doping, the complex dielectric and microwave absorption properties of the tailored nano-SiC are clearly improved in the 2-18 GHz range when compared to previously reported SiC and N-doped SiC nanoparticles. The higher epsilon '' and tan delta values are attributed to fortified polarization relaxation by optimized N-doping and novel nanoflake morphology. A wideband reflection loss exceeding -10 dB (90% microwave absorption) reached 4.1 GHz with an absorber thickness of 1.58 mm. A minimum value of -42 dB at 8 GHz was also achieved. The mechanism of dielectric loss of nanoflake N-doped SiC is discussed in detail. Published by AIP Publishing. |
| 学科主题 | Physics, Applied |
| 语种 | 英语 |
| 资助机构 | Natural Science Foundation of China (NSFC) [51571195, 51271178, 51331006, 51590883]; National Key R&D Program of China [2017YFA0206301] |
| 公开日期 | 2018-01-10 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/78968]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 通讯作者 | Ma, S (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.; He, J (reprint author), Cent Iron & Steel Res Inst, Div Funct Mat Res, Beijing 100081, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Hua, An,Wei, Feng,Pan, Desheng,et al. Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC[J]. AMER INST PHYSICS,2017,111(22):-. |
| APA | Hua, An.,Wei, Feng.,Pan, Desheng.,Yang, Liang.,Feng, Yang.,...&He, J .(2017).Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC.AMER INST PHYSICS,111(22),-. |
| MLA | Hua, An,et al."Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC".AMER INST PHYSICS 111.22(2017):-. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。