The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure
文献类型：期刊论文
| 作者 | Bi Y ; Lin DF; Peng EC
|
| 刊名 | applied physics a-materials science & processing
 |
| 出版日期 | 2011 |
| 卷号 | 104期号:4页码:1211-1216 |
| 关键词 | 2-DIMENSIONAL ELECTRON-GAS ALGAN/GAN/INGAN/GAN DH-HEMTS MILLIMETER-WAVE APPLICATIONS FIELD-EFFECT TRANSISTORS HETEROJUNCTION FETS HETEROSTRUCTURES PASSIVATION CONFINEMENT PERFORMANCE BARRIERS |
| ISSN号 | 0947-8396 |
| 通讯作者 | bi, y (reprint author), chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. ybi@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02] |
| 语种 | 英语 |
| 公开日期 | 2011-09-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22573]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Bi Y,Lin DF,Peng EC. The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure[J]. applied physics a-materials science & processing,2011,104(4):1211-1216. |
| APA | Bi Y,Lin DF,&Peng EC.(2011).The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure.applied physics a-materials science & processing,104(4),1211-1216. |
| MLA | Bi Y,et al."The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure".applied physics a-materials science & processing 104.4(2011):1211-1216. |
入库方式： OAI收割
来源：半导体研究所
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