Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
文献类型：期刊论文
| 作者 | Pan X
|
| 刊名 | journal of materials science-materials in electronics
 |
| 出版日期 | 2011 |
| 卷号 | 22期号:8页码:1028-1032 |
| ISSN号 | 0957-4522 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION PHASE EPITAXY ALN INTERLAYERS FILMS STRESS LAYERS DISLOCATIONS REDUCTION DENSITY DIODES |
| 通讯作者 | wei, m (reprint author), chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china. mengw@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb32 7503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas 2009l02] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-09-14 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22575]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Pan X. Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates[J]. journal of materials science-materials in electronics,2011,22(8):1028-1032. |
| APA | Pan X.(2011).Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates.journal of materials science-materials in electronics,22(8),1028-1032. |
| MLA | Pan X."Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates".journal of materials science-materials in electronics 22.8(2011):1028-1032. |
入库方式： OAI收割
来源：半导体研究所
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