Total ionizing dose effects and annealing behavior for domestic VDMOS devices
文献类型：期刊论文
| 作者 | Gao ; Yu ; Ren ; Liu ; Wang ; Sun ; Cui ; Bo1 ; Xuefeng1 ; Diyuan1 ; Gang3 ; Yiyuan1 ; Jing1 ; Jiangwei1 ; 2 ; 2 ; 2 ; 2 ; 2 ; 2 ; 4 ; 4 ; 4 |
| 刊名 | Journal of Semiconductors
 |
| 出版日期 | 2010 |
| 卷号 | 31期号:4 |
| 关键词 | Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices |
| ISSN号 | 1674-4926 |
| 中文摘要 | Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 °C annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a "rebound" effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing. © 2010 Chinese Institute of Electronics. (11 refs.) |
| 收录类别 | EI |
| 公开日期 | 2011-08-19 |
| 源URL | [http://ir.xjlas.org/handle/365004/10708]  |
| 专题 | 新疆生态与地理研究所_中国科学院新疆生态与地理研究所(2010年以前数据) |
| 推荐引用方式 GB/T 7714 | Gao,Yu,Ren,et al. Total ionizing dose effects and annealing behavior for domestic VDMOS devices[J]. Journal of Semiconductors,2010,31(4). |
| APA | Gao.,Yu.,Ren.,Liu.,Wang.,...&4.(2010).Total ionizing dose effects and annealing behavior for domestic VDMOS devices.Journal of Semiconductors,31(4). |
| MLA | Gao,et al."Total ionizing dose effects and annealing behavior for domestic VDMOS devices".Journal of Semiconductors 31.4(2010). |
入库方式： OAI收割
来源：新疆生态与地理研究所
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