Mn implanted GaAs by low energy ion beam deposition
文献类型：期刊论文
| 作者 | Song SL; Chen NF(陈诺夫) ; Zhou JP; Yin ZG; Li YL; Yang SY; Liu ZK
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 264期号:1-3页码:31-35 |
| 通讯作者邮箱 | slsong@red.semi.ac.cn |
| 关键词 | X-Ray Diffraction Ion Beam Deposit Magnetic Materials Semiconducting Gallium Arsenide Curie-Temperature Semiconductors Ferromagnetism System Mn)As (Ga Gan |
| ISSN号 | 0022-0248 |
| 通讯作者 | Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| 中文摘要 | High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | CURIE-TEMPERATURE ; SEMICONDUCTORS ; FERROMAGNETISM ; SYSTEM ; MN)AS ; (GA ; GAN |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000220345400007 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33809]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Song SL,Chen NF,Zhou JP,et al. Mn implanted GaAs by low energy ion beam deposition[J]. Journal of Crystal Growth,2004,264(1-3):31-35. |
| APA | Song SL.,陈诺夫.,Zhou JP.,Yin ZG.,Li YL.,...&Liu ZK.(2004).Mn implanted GaAs by low energy ion beam deposition.Journal of Crystal Growth,264(1-3),31-35. |
| MLA | Song SL,et al."Mn implanted GaAs by low energy ion beam deposition".Journal of Crystal Growth 264.1-3(2004):31-35. |
入库方式： OAI收割
来源：力学研究所
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