FexSi grown with mass-analyzed low-energy dual ion beam deposition
文献类型：期刊论文
| 作者 | Liu LF; Chen NF(陈诺夫) ; Zhang FQ(张富强); Chen CL; Li YL; Yang SY; Liu Z
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 263期号:1-4页码:143-147 |
| 通讯作者邮箱 | lfliu@red.semi.ac.cn |
| 关键词 | Auger Electron Spectroscopy X-Ray Diffraction Ion Beam Deposition Semiconducting Silicon Doped Si-Mn Spin-Photonics Thin-Films Silicon Gas |
| ISSN号 | 0022-0248 |
| 通讯作者 | Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. |
| 中文摘要 | Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | DOPED SI-MN ; SPIN-PHOTONICS ; THIN-FILMS ; SILICON ; GAS |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000220184400023 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33811]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Liu LF,Chen NF,Zhang FQ,et al. FexSi grown with mass-analyzed low-energy dual ion beam deposition[J]. Journal of Crystal Growth,2004,263(1-4):143-147. |
| APA | Liu LF.,陈诺夫.,张富强.,Chen CL.,Li YL.,...&Liu Z.(2004).FexSi grown with mass-analyzed low-energy dual ion beam deposition.Journal of Crystal Growth,263(1-4),143-147. |
| MLA | Liu LF,et al."FexSi grown with mass-analyzed low-energy dual ion beam deposition".Journal of Crystal Growth 263.1-4(2004):143-147. |
入库方式： OAI收割
来源：力学研究所
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