The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N
文献类型：期刊论文
| 作者 | Zhang FQ(张富强); Chen NF(陈诺夫) ; Liu XL; Liu ZK; Yang SY; Chai CL
|
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 262期号:1-4页码:287-289 |
| 通讯作者邮箱 | fqzh@red.semi.ac.cn |
| 关键词 | X-Ray Diffraction Ion Beam Deposition Gan/Al2O3 Ferromagnetic Materials Implanted Gan Injection |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. |
| 中文摘要 | Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved. |
| 类目[WOS] | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 研究领域[WOS] | Crystallography ; Materials Science ; Physics |
| 关键词[WOS] | IMPLANTED GAN ; INJECTION |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000189098700043 |
| 公开日期 | 2009-08-03 ; 2010-06-13 |
| 源URL | [http://dspace.imech.ac.cn/handle/311007/33817]  |
| 专题 | 力学研究所_力学所知识产出(1956-2008) |
| 推荐引用方式 GB/T 7714 | Zhang FQ,Chen NF,Liu XL,et al. The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N[J]. Journal of Crystal Growth,2004,262(1-4):287-289. |
| APA | 张富强,陈诺夫,Liu XL,Liu ZK,Yang SY,&Chai CL.(2004).The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N.Journal of Crystal Growth,262(1-4),287-289. |
| MLA | 张富强,et al."The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N".Journal of Crystal Growth 262.1-4(2004):287-289. |
入库方式： OAI收割
来源：力学研究所
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